Analytical Extraction of a Schottky Diode Model From Broadband $S$-Parameters

Abstract

We present an analytic method to extract Schottky diode parasitic model parameters. All the ten unknown model parameters are extracted via a straightforward step-by-step procedure. The challenges for a proper finger inductance and series resistance extraction are discussed and solutions are recommended. The proposed method is evaluated using three sets of -parameter data for GaAs-based planar Schottky diodes, i.e., data from measurement up to 110 GHz and 3-D electromagnetic full-wave simulations up to 600 GHz. The extracted models agree well with the measured and simulated data.

Accurately Modeling of Zero Biased Schottky-Diodes at Millimeter-Wave Frequencies

“…Modeling of the ZBD was based on the procedures presented in [16,17]. Firstly, a 3D model of the passive parts for EM simulation (HFSS TM ) was built based on microphotographs ( Figure 1) and physical measurements of the critical dimensions, performed with a Scanning Electron Microscope (SEM) available in the Laboratory of Science and Engineering of Materials of the University of Cantabria (LADICIM).…”

“…Usually, the device modeling is accomplished by discriminating between the modeling of the intrinsic component (characterized by quasi-static I-V and C-V measurements) and the extrinsic elements (characterized by 3D Electro-Magnetic (EM) tools, along with the measurement of the Scattering parameters at some specific bias points). In [16], modeling techniques are presented to extract a Schottky diode model analytically using additional fabricated structures (such as short and open circuits) for the de-embedding of parasitic capacitances and other effects. Unfortunately, it is not always possible to have such customized cal kit (calibration kit) structures available.…”

Design and Fabrication of Broadband Hybrid GaAs Schottky Diode Frequency Multipliers

“…A more sophisticated junction modeling approach, e.g., [1], would be promising, but it requires disproportionate measurement effort or dimensions and material parameters of the Schottky junction that are difficult to obtain in case of proprietary diodes. With all subsystems connected in a parameterized co-simulation, the multipliers conversion efficiency is optimized by tuning the embedding impedances , at all involved harmonics [2].…”

“…Furthermore, the influence of the coaxial connectors is not entirely included within simulations. More sophisticated Schottky junction modelling approaches have been reported [1], but can hardly be utilized with commercial diodes due to insufficient information about material and geometry parameters of the diode.…”

A method for testing accuracy of the calibration standards based on reciprocity conditions of the error network

“…On‐wafer S ‐parameter measurements are a significant part of millimeter wave and terahertz device testing. Modeling of the devices rely heavily on accurate wideband S ‐parameter vector network analyzer measurements . Thus, the calibration and measurement accuracies are very important for the on‐wafer S ‐parameter measurements.…”