Development of a 557 GHz GaAs monolithic membrane-diode mixer

Zhao, Huan; Drakinskiy, Vladimir; Sobis, Peter; Hanning, Johanna; Tang, Aik-Yean; Stake, Jan

doi:10.1109/iciprm.2012.6403330

Cited by 9 publications

(9 citation statements)

References 6 publications

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“…By integrating the diodes within a peripheral circuit, we successfully demonstrate an RF mixer for 5G communication. Although high cutoff frequencies over ~100 GHz have been reported for devices with single-crystalline Si (28,36,37) and GaAs (38,39), achieving 5G-compatible frequencies (> 28 GHz) using thin film-based devices is challenging (40,41) (see fig. S17 for comparison.)…”

Section: Discussionmentioning

confidence: 99%

Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning

Hong

Lee

et al. 2023

Sci. Adv.

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Graphene, with superior electrical tunabilities, has arisen as a multifunctional insertion layer in vertically stacked devices. Although the role of graphene inserted in metal-semiconductor junctions has been well investigated in quasi-static charge transport regime, the implication of graphene insertion at ultrahigh frequencies has rarely been considered. Here, we demonstrate the diode operation of vertical Pt/n-MoSe 2 /graphene/Au assemblies at ~200-GHz cutoff frequency (f C ). The electric charge modulation by the inserted graphene becomes essentially frozen above a few GHz frequencies due to graphene quantum capacitance–induced delay, so that the Ohmic graphene/MoSe 2 junction may be transformed to a pinning-free Schottky junction. Our diodes exhibit much lower total capacitance than devices without graphene insertion, deriving an order of magnitude higher f C , which clearly demonstrates the merit of graphene at high frequencies.

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Section: Discussionmentioning

confidence: 99%

Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning

Hong

Lee

et al. 2023

Sci. Adv.

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“…This method is a good candidate for a terahertz mixer design. [2] 520-600 hybrid 30-50 7.7 [23] 520-590 hybrid 6-10 12 [24] 630-720 hybrid 2-8 10.5 [25] 530-590 monolithic 1.5 9 [26] 520-620 hybrid 3 5.7 this work 540-580 hybrid 3 8…”

Section: Discussionmentioning

confidence: 99%

A 560 GHz Sub-Harmonic Mixer Using Half-Global Design Method

Zhang

Pan

et al. 2021

Electronics

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In this paper, a 560 GHz terahertz sub-harmonic mixer using a new half-global design method is reported. This method combines the advantages of the subdivision design method and the global design method, and greatly enhances the abilities of the optimization of matching variables while retaining the portability of the unit circuit. When the local oscillator (LO) frequency was fixed with 3 mW power at 280 GHz, average up-conversion double sideband (DSB) conversion loss of 8 dB with intermediate frequency (IF) power of −5 dBm was achieved.

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“…Nevertheless, the loss due to the excitation of the substrate modes becomes severe at high terahertz frequencies. Therefore, membrane-based diodes with a GaAs layer with a thickness of a few micrometers are usually used as the operating frequency increases [36][37][38]. Bene ting from advancements in nanofabrication technologies, various types of high-performance, integrated planar Schottky diode mixers have been realized using innovative device topologies [27].…”

Section: Schottky Diode Mixersmentioning

confidence: 99%

“…Therefore, their sensitivity enhancement by cryogenic cooling is limited [27]. Schottky diode mixers with decent sensitivities have been realized up to 4.7 THz [19,[35][36][37][38][40][41][42]. The typical local oscillator power requirement of a Schottky diode mixer is several milliwatts, which is comparatively higher than the requirements of SIS and HEB mixers.…”

Section: Schottky Diode Mixersmentioning

confidence: 99%

“…The typical local oscillator power requirement of a Schottky diode mixer is several milliwatts, which is comparatively higher than the requirements of SIS and HEB mixers. Hence, subharmonic mixers that use the higherorder harmonics of a lower-frequency local oscillator signal for mixing are quite attractive because of the availability of high-power local oscillators at lower frequencies [37,38,42]. Since Schottky diode multipliers can be used as local oscillators of Schottky diode mixers, fully integrated solid-state heterodyne terahertz receivers have been implemented.…”

Section: Schottky Diode Mixersmentioning

confidence: 99%

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Heterodyne terahertz detection through electronic and optoelectronic mixers

Lin

Jarrahi

2020

Rep. Prog. Phys.

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The high sensitivity detection of terahertz radiation is crucial for many chemical sensing, biomedical imaging, security screening, nondestructive quality control, high-data-rate communication, atmospheric, and astrophysics sensing applications. Among various terahertz detection techniques, heterodyne detection is of great interest for applications that require high spectral resolution. Heterodyne detection involves mixing the received terahertz radiation with a reference terahertz signal provided by a local oscillator and then down-converting it to an intermediate frequency for detection. The frequency of the intermediate frequency signal is usually chosen to be in the radio frequency regime, so that it can be accurately analyzed by well-developed radio frequency electronics, including ampli ers, lters, and spectrometers, for further processing. Heterodyne terahertz detection offers two major advantages over direct terahertz detection. First, the detected terahertz radiation is effectively enhanced by the reference local oscillator signal through the mixing process, thereby enabling the detection of very weak terahertz signals. Second, the detected noise power is effectively reduced by limiting the detected spectral bandwidth to the bandwidth of the intermediate frequency electronics. In this article, we present a broad overview of various types of heterodyne terahertz receivers, which utilize different electronic and optoelectronic techniques to down-convert the received terahertz signal to a radio frequency signal. We describe how the inherent nonlinearity of a Schottky diode, superconductor-insulator-superconductor junction, hot electron bolometer, and eld-effect transistor can be utilized to mix the received terahertz radiation with a reference local oscillator signal from a gas laser, quantum cascade laser, photomixer, Gunn diode, IMPATT diode, and frequency multiplier and then down-convert it to a radio frequency signal. The down-converted radio frequency signal can be subsequently detected and analyzed by various backend spectrometers, including lter bank, acousto-optical, autocorrelator, fast Fourier transform, and chirp transform spectrometers. We also discuss how a photomixer pumped by a heterodyning optical beam can be used to down-convert the received terahertz radiation to a radio frequency signal with far fewer bandwidth constraints than conventional techniques. The advantages and disadvantages of different heterodyne receivers in terms of their noise performance, operation frequency, operation bandwidth, and operation temperature are discussed in detail.

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Development of a 557 GHz GaAs monolithic membrane-diode mixer

Cited by 9 publications

References 6 publications

Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning

Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning

A 560 GHz Sub-Harmonic Mixer Using Half-Global Design Method

Heterodyne terahertz detection through electronic and optoelectronic mixers

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