We present terahertz (THz) detectors based on top-gated graphene field effect transistors (GFETs) with integrated split-bow-tie antennas. The GFETs were fabricated using graphene grown by chemical vapor deposition (CVD). The THz detectors are capable of roomtemperature rectification of a 0.6 THz signal and achieve a maximum optical responsivity better than 14 V/W and minimum optical noise-equivalent power (NEP) of 515 pW/Hz 0.5 . Our results are a significant improvement over previous work on graphene direct detectors and are comparable to other established direct detector technologies.
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