We report on the design and characterization of a re-growth free InGaAsP/InP multiple quantum well two-electrode laterally coupled distributed feedback (LC-DFB) lasers. Third-order surface etched gratings have been defined on the ridge sidewalls along the laser cavity by means of stepper lithography. The lasers oscillate in single-mode around 1560 nm with high side mode suppression ratios (>52 dB), a wavelength tuning (≥ 3nm), an output power (≥ 6 mW), and narrow linewidth (<170 kHz) under various current injection ranges at room temperature. A minimum linewidth of 94 kHz has been recorded for 1500 µm-long two-electrode LC-DFB laser while providing non-uniform current injection through the two electrodes. The effect of the width of the inter-electrode gap on these different performance measures is also studied.

We report on the design and characterization of InP-based multiple quantum well corrugated ridge waveguide distributed feedback diode lasers operating at 1550 nm. Thirdorder gratings have been etched along the sidewalls of the ridge waveguide using the standard I-line stepper lithography technique with an inductively coupled reactive ion etching process. An as-cleaved 1500-μm-long laser diode shows stable continuous wave single-mode operation at 1550 nm with high side-mode suppression ratios (>50 dB), a temperature-dependent wavelength shift dλ/dT ∼0.095 nm/°C, and output powers ≥7 mW at 25°C. Linewidth determination has been carried using the delayed self-heterodyne interferometric technique. Narrow linewidths (≤250 kHz) have been observed for a wide range of current injection, with a minimum of 184 kHz at 300 mA.Index Terms-Distributed feedback (DFB) lasers, delayed selfheterodyne interferometry, InP/InGaAsP multiple quantum well (MQW), Lorentzian lineshape, stepper lithography, Voigt profile.

A broadband and low-polarization-sensitive multi-quantum well semiconductor optical amplifier with an asymmetric structure is reported for operation in the E-band wavelength range. A gain peak of 20 dB for a bandwidth of more than 50 nm is measured for both TE and TM polarizations. A maximum polarization sensitivity of 3 dB is measured for a broad wavelength range from 1340 to 1440 nm.

A broadband semiconductor optical amplifier (SOA) has been realized for the coarse WDM (CWDM) based systems operating over the O-band range. The SOA exhibits low polarization sensitivity, 23 dB gain and low noise based on the asymmetric multi-quantum well (AMQW) technique. Reflective SOAs (for modulating the upstream data in passive optical networks (PONs)) as well as in-line or booster amplifiers in CWDM systems are some of the applications of such a SOA.

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We demonstrate a split-contact corrugated ridge waveguide InGaAsP distributed feedback laser at 1560 nm. The laser cavity has been defined with uniform third-order gratings etched along the sidewalls of the ridge waveguide. The gratings were fabricated using a standard I-line stepper lithography technique along with an inductively coupled reactive ion-etching process. Stable single-mode operation has been achieved with side-mode suppression ratios ≥50  dB, output powers ≥7  mW, a wavelength tuning range ≥2.3  nm, and narrow linewidths (≤140  kHz) for different biasing conditions, with a minimum of 70 kHz. The effect of p-contact partition on device performance is also studied.

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