Low polarization-sensitive asymmetric multi-quantum well semiconductor amplifier for next-generation optical access networks

Nkanta, Julie E.; Maldonado-Basilio, Ramón; Khan, Kaiser; Benhsaien, Abdessamad; Abdul-Majid, Sawsan; Zhang, Jessica; Hall, Trevor J.

doi:10.1364/ol.38.003165

Cited by 11 publications

(5 citation statements)

References 13 publications

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“…The SOA designed in this paper is compared with the SOA reported in the literature as shown in Table 2 [ 16 , 17 , 18 , 19 , 20 ]. Upon comparison, it is evident that the SOA designed in this study holds advantages in both output power and gain bandwidth.…”

Section: Discussionmentioning

confidence: 99%

Semiconductor Optical Amplifiers with Wide Gain Bandwidth and Enhanced Polarization Insensitivity Based on Tensile-Strained Quantum Wells

Tang,

Zhang,

Yang

et al. 2024

Sensors

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The paper presents a wide-bandwidth, low-polarization semiconductor optical amplifier (SOA) based on strained quantum wells. By enhancing the material gain of quantum wells for TM modes, we have extended the gain bandwidth of the SOA while reducing its polarization sensitivity. Through a combination of tilted waveguide design and cavity surface optical thin film design, we have effectively reduced the cavity surface reflectance of the SOA, thus decreasing device transmission losses and noise figure. At a wavelength of 1550 nm and a drive current of 1.4 A, the output power can reach 188 mW, with a small signal gain of 36.4 dB and a 3 dB gain bandwidth of 128 nm. The linewidth broadening is only 1.032 times. The polarization-dependent gain of the SOA is below 1.4 dB, and the noise figure is below 5.5 dB. The device employs only I-line lithography technology, offering simple fabrication processes and low costs yet delivering outstanding and stable performance. The designed SOA achieves wide gain bandwidth, high gain, low polarization sensitivity, low linewidth broadening, and low noise, promising significant applications in the wide-bandwidth optical communication field across the S + C + L bands.

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Section: Discussionmentioning

confidence: 99%

Semiconductor Optical Amplifiers with Wide Gain Bandwidth and Enhanced Polarization Insensitivity Based on Tensile-Strained Quantum Wells

Tang,

Zhang,

Yang

et al. 2024

Sensors

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“…Another important factor that is essential in SOA performance is noise figure (NF). By launching a coherent input signal to the SOA, the noise figure can be calculated by [12], [26]:…”

Section: Design and Simulation Of Bulk Pi Soamentioning

confidence: 99%

“…Several groups have investigated different approaches to achieve low polarization-sensitive or polarization-insensitive (PI) SOAs. Strained-bulk [6]- [9] and multi-quantum well (MQW) SOAs by putting strain on the well [10]- [12] or barrier layers [13]- [15] embedded in a buried or ridge waveguide (WG) structures have been demonstrated. It is well-known that the realization of PI strained SOAs based on MQW and strained bulk SOA require high precision epitaxial growth to engineer the energy bands (for a desired wavelength emission band), material gain, and strain level [13]- [15].…”

mentioning

confidence: 99%

Design and Fabrication of Low Polarization Dependent Bulk SOA Co-Integrated With Passive Waveguides for Optical Network Systems

Rasoulzadehzali

Kleijn²,

Augustin³

et al. 2022

J. Lightwave Technol.

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“…Noise figure (NF) is another important parameter in SOA performance. Assuming continuous wave coherent input signal to the SOA as an input, the noise figure can be estimated by [23,24]…”

Section: Modal Gain Noise Figure and Pdg Spectramentioning

confidence: 99%

Design and Analysis of Novel O-Band Low Polarization Sensitive SOA Co-Integrated With Passive Waveguides for Optical Systems

Zali

Calabretta

2022

IEEE Photonics J.

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Low polarization-dependent semiconductor optical amplifiers (SOAs) with an easy fabrication process and the capability to be co-integrated with passive elements are crucial in photonic integrated circuits. In this work, we design, simulate, and optimize a low polarization-dependent bulk SOA based on a novel layerstack with an unstrained bulk active layer with a robust and easy fabrication process that allows the co-integration with passive waveguides. The designed layerstack shows that the reflection between SOA and the passive waveguide is less than 1.3×10 -5 . Furthermore, by designing the ridge waveguide and layerstack (thickness of the core and cladding layers), the confinement factor of TEand TM-modes (ГTE/TM) are engineered to be approximately the same. This results in a low polarization-dependent SOA (since for the active bulk layer, the material gain of TE-mode is very close to the material gain of TM-mode). Numerical assessment of different length SOAs in terms of gain, polarization-dependent gain (PDG), noise figure versus wavelength, input power, and bias current are extensively investigated. At low input power, a broadband gain with a spectral bandwidth of 95 nm, PDG less than 2 dB, output saturation power of 6.8 dBm, and noise figure less than 6.5 dB are achieved for 300 μm SOA at a current density of 10 kA/cm 2 . Longer SOA with 1100 μm length exhibits 30 dB gain with 75 nm bandwidth, PDG less than 3.8 dB, noise figure less than 6.7 dB, and 10.7 dBm saturation power at 10 kA/cm 2 . On the other side, as the input power increases the gain and PDG decrease, while the noise figure increases for higher input powers (> 0 dBm). Moreover, a booster SOA (1100 μm) with higher output saturation power has been investigated by widening the width of SOA from 1 μm to 3 μm. The output saturation power at 10 kA/cm 2 increases from +7.6 dBm to +13.9 dBm, when the width of the SOA waveguide increases from 1 μm to 3 μm. Finally, we discuss the fabrication tolerance on SOA characteristics. We show that the PDG strongly depends on the cladding layer thickness tolerance and decreases from 2.3 dB to 1.3 dB as it changes from 135 nm to 175 nm, while the output saturation power variation is only around 0.5 dB.

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Low polarization-sensitive asymmetric multi-quantum well semiconductor amplifier for next-generation optical access networks

Cited by 11 publications

References 13 publications

Semiconductor Optical Amplifiers with Wide Gain Bandwidth and Enhanced Polarization Insensitivity Based on Tensile-Strained Quantum Wells

Semiconductor Optical Amplifiers with Wide Gain Bandwidth and Enhanced Polarization Insensitivity Based on Tensile-Strained Quantum Wells

Design and Fabrication of Low Polarization Dependent Bulk SOA Co-Integrated With Passive Waveguides for Optical Network Systems

Design and Analysis of Novel O-Band Low Polarization Sensitive SOA Co-Integrated With Passive Waveguides for Optical Systems

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