O-band semiconductor optical amplifier design for CWDM applications

Assadi-Haghi, Atousa; Teimoori, H.; Millett, R.; Benhsaien, Abdessamad; Tolstikhin, V.I.; Hall, Trevor J.; Hinzer, Karin

doi:10.1109/mnrc.2008.4683385

Cited by 9 publications

(4 citation statements)

References 13 publications

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“…We use the type A AMQW for the proposed SOA device. Details regarding epitaxial layers and strain are presented in [3]. The structure is modeled using commercially available simulators [4].…”

Section: A Materials Gainmentioning

confidence: 99%

Semiconductor optical amplifier designs for passive optical network extensions

Assadihaghi

Teimoori

Benhsaien

et al. 2009

2009 IEEE International Conference on Indium Phosphide &Amp; Related Materials

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Section: A Materials Gainmentioning

confidence: 99%

Semiconductor optical amplifier designs for passive optical network extensions

Assadihaghi

Teimoori

Benhsaien

et al. 2009

2009 IEEE International Conference on Indium Phosphide &Amp; Related Materials

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“…They are available in both C-band and O-band. When designed in O-band, they are commonly used in coarse wavelength-division multiplexing (CWDM) systems [9]. Manifold researches have shown their role in optical communication networks.…”

Section: Introductionmentioning

confidence: 99%

SOA Model and Design Guidelines in Lossless Photonic Subsystem

Goki¹,

Tufano²,

Cavaliere³

et al. 2022

New Advances in Semiconductors

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We propose a new practical analytical model to calculate the performance of amplitude-modulated systems, including semiconductor optical amplifiers (SOA). Lower and upper-performance bounds are given in terms of signal quality factor (Q) concerning the input signal pattern. The target is to provide a design tool for gain elements included in photonic integrated circuits (PIC) to compensate for their insertion loss. This subject is a critical issue, for example, in the arrays of optical transmitters with silicon photonics modulators used for interconnection applications. Due to implementation limitations, the design of an SOA embedded in a PIC is considerably different with respect to the use of SOAs as line amplifiers in optical networks. SOA amplified spontaneous emission (ASE) and gain saturation effects have been included in the model, together with the input signal extinction ratio and the receiver electrical filter. Each degradation effect provides its own contribution to the signal integrity in terms of signal-to-noise ratio (SNR) or inter-symbol interference (ISI). The model shows that the SOA operation at low extinction ratios, typical in optical interconnect applications, is substantially different from the operation at higher extinction ratios used in transport networks. The model is validated through numerical simulations and experiments. Finally, two examples are provided for dimensioning a PIC system and optimizing the SOA parameters.

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“…Studies include increasing the capacity of transmission signal by increasing the channel bit rate [1], reducing the channel spacing between existing channels to maximize the transmission windows [2] or by exploring a new transmission windows [3,4]. Between these options, the extension of the transmission current window is the only option that utilizes the existing optical and electrical technologies [5], which can minimize the transformation cost.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the effects of SOA locations in the linear cavity of an O-band Brillouin SOA fiber laser

Ahmad

Norizan

Zulkifli

et al. 2011

Journal of Modern Optics

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An investigation into the effect of semiconductor optical amplifier (SOA) location in an O-band Brillouin SOA fiber laser (BSFL) was performed. Better output peak power flatness was generated by placing the SOA after the nonlinear medium, which is a 20 km true wave fiber (TWF) than placing it before the TWF. A maximum power of six flat output peaks with average power of À22.0 dBm for a BP (Brillouin pump) wavelength of 1320 nm was obtained, generated from a BSFL with a SOA located after the TWF, compared with three flat Stokes signals with the SOA before the TWF at a BP wavelength of 1310 nm. The flat peak power output for the O-band Brillouin fiber laser is important, especially in producing a good O-band source.

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O-band semiconductor optical amplifier design for CWDM applications

Cited by 9 publications

References 13 publications

Semiconductor optical amplifier designs for passive optical network extensions

Semiconductor optical amplifier designs for passive optical network extensions

SOA Model and Design Guidelines in Lossless Photonic Subsystem

Investigation of the effects of SOA locations in the linear cavity of an O-band Brillouin SOA fiber laser

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