Ultralow power dual-gated subthreshold oxide neuristors : an enabler for higher order neuronal temporal correlations

Sensory information processing in robot skins currently rely on a centralized approach where signal transduction (on the body) is separated from centralized computation and decisionmaking, requiring the transfer of large amounts of data from periphery to central processors, at the cost of wiring, latency, fault tolerance and robustness. We envision a decentralized approach where intelligence is embedded in the sensing nodes, using a unique neuromorphic methodology to extract relevant information in robotic skins. Here we specifically address pain perception and the association of nociception with tactile perception to trigger the escape reflex in a sensorized robotic arm. The proposed system comprises self-healable materials and memtransistors as enabling technologies for the implementation of neuromorphic nociceptors, spiking local associative learning and communication. Configuring memtransistors as gated-threshold and-memristive switches, the demonstrated system features in-memory edge computing with minimal hardware circuitry and wiring, and enhanced fault tolerance and robustness.

Haptics involves human touch sensing and tactile feedback and plays a crucial role in physical interactions of humans with their environment. There is an ever‐increasing interest in development of haptic technologies, due to their role in various applications such as robotics, virtual and augmented reality, healthcare, and smart electronics. Electrically driven actuation mechanisms for soft materials like dielectric elastomer actuators (DEAs), electrohydraulic soft actuators (ESAs), ionic polymer−metal composites (IPMCs), and liquid crystal elastomers (LCEs) hold the potential for the development of the next generation of haptic feedback devices due to a variety of advantages such as light weight and compact design, untethered activation and control, large actuation strains, and distributed and localized actuation. Herein, a detailed look is taken at the advancement in material designs for these electrically driven soft actuators. A detailed analysis of the different strategies for improving the electromechanical performance of existing material systems is presented. Approaches adopted to synthesize novel material systems are explained. Advancements in compliant electrode materials for the electrically driven soft actuators are also described. The conclusion reflects on the main challenges in the field and provides perspectives on recent advancements expected to have a significant impact.

The review highlights low temperature activation processes for high performance n-type metal oxide semiconductors for TFTs.

Zinc oxide photonic crystal (ZnO PC) formed via facile nanoimprinting was employed on the ZnO electron selective layer of inverted organic photovoltaics (OPV). Optimized inverted OPV fabricated with these highly ordered periodic structures provided effective light trapping, which resulted in increased incident light absorption in the active layer. Consequently, OPVs with the ZnO PC layers show a 23% current density improvement compared with OPVs with planar ZnO layer. Finite-difference timedomain simulation studies show that the electric field intensity is significantly higher in the active layer for devices with ZnO PC structures in comparison with reference devices with planar ZnO electron selective layer. Nanoimprinted ZnO PC is, thus, a viable method for light absorption and efficiency enhancement in OPVs. Index Terms-Organic photovoltaics (OPV), photonic crystal (PC), zinc oxide (ZnO). A. Nirmal, W. Jianxiong, K. Dev, and X. Sun are with the LUMINOUS! Center

The systematic evaluation of the link budget calculation for the satellite and terrestrial communication is presented in this article. Communication link between the satellite and earth station is dependent on various propagation and associated losses which are either constant or vary with weather conditions. Role of receiver noise, antenna pointing mechanism, atmospheric effects, slant height, interferences, bit error rate on the link margin are detailed in this article. Various equations for link budget calculation and a comparative table at various frequency bands are shown in this article which is useful for predicting link margin of LEO, GEO and Deep space missions. Tele-command, telemetry and ranging link margin at various frequencies are presented and budget analysis at Ka-band frequency performed.

Despite extensive research, large‐scale realization of metal‐oxide electronics is still impeded by high‐temperature fabrication, incompatible with flexible substrates. Ideally, an athermal treatment modifying the electronic structure of amorphous metal oxide semiconductors (AMOS) to generate sufficient carrier concentration would help mitigate such high‐temperature requirements, enabling realization of high‐performance electronics on flexible substrates. Here, a novel field‐driven athermal activation of AMOS channels is demonstrated via an electrolyte‐gating approach. Facilitating migration of charged oxygen species across the semiconductor–dielectric interface, this approach modulates the local electronic structure of the channel, generating sufficient carriers for charge transport and activating oxygen‐compensated thin films. The thin‐film transistors (TFTs) investigated here depict an enhancement of linear mobility from 51 to 105.25 cm2 V−1 s−1 (ionic‐gated) and from 8.09 to 14.49 cm2 V−1 s−1 (back‐gated), by creating additional oxygen vacancies. The accompanying stochiometric transformations, monitored via spectroscopic measurements (X‐ray photoelectron spectroscopy) corroborate the detailed electrical (TFT, current evolution) parameter analyses, providing critical insights into the underlying oxygen‐vacancy generation mechanism and clearly demonstrating field‐induced activation as a promising alternative to conventional high‐temperature annealing strategies. Facilitating on‐demand active programing of the operation modes of transistors (enhancement vs depletion), this technique paves way for facile fabrication of logic circuits and neuromorphic transistors for bioinspired computing.

Microstructured porous zinc oxide (ZnO) thin film was developed and demonstrated as an electron selective layer for enhancing light scattering and efficiency in inverted organic photovoltaics. High degree of porosity was induced and controlled in the ZnO layer by incorporation of polyethylene glycol (PEG) organic template. Scanning electron microscopy, contact angle and absorption measurements prove that the ZnO:PEG ratio of 4:1 is optimal for the best performance of porous ZnO. Ensuring sufficient pore-filling, the use of porous ZnO leads to a marked improvement in device performance compared to non-porous ZnO, with 35% increase in current density and 30% increase in efficiency. Haze factor studies indicate that the performance improvement can be primarily attributed to the improved light scattering enabled by such a highly porous structure.