Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors

Tiwari, Nidhi; Nirmal, A V; Kulkarni, Mohit Rameshchandra; John, Rohit Abraham; Mathews, Nripan

doi:10.1039/d0qi00038h

Cited by 45 publications

(21 citation statements)

References 156 publications

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“…give breakdowns of the various approaches for low temperature fabrication of MOs. [ 135,136 ] Among those approaches, the variation in precursor chemistry has proven quite effective. Here, the work by Cochran et al.…”

Section: Flexible Electronic Devicesmentioning

confidence: 99%

Flexible Oxide Thin Film Transistors, Memristors, and Their Integration

Panca

Panidi

Faber

et al. 2023

Adv Funct Materials

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Flexible electronics have seen extensive research over the past years due to their potential stretchability and adaptability to non‐flat surfaces. They are key to realizing low‐power sensors and circuits for wearable electronics and Internet of Things (IoT) applications. Semiconducting metal‐oxides are a prime candidate for implementing flexible electronics as their conformal deposition methods lend themselves to the idiosyncrasies of non‐rigid substrates. They are also a major component for the development of resistive memories (memristors) and as such their monolithic integration with thin film electronics has the potential to lead to novel all‐metal‐oxide devices combining memory and computing on a single node. This review focuses on exploring the recent advances across all these fronts starting from types of suitable substrates and their mechanical properties, different types of fabrication methods for thin film transistors and memristors applicable to flexible substrates (vacuum‐ or solution‐based), applications and comparison with rigid substrates while additionally delving into matters associated with their monolithic integration.

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Section: Flexible Electronic Devicesmentioning

confidence: 99%

Flexible Oxide Thin Film Transistors, Memristors, and Their Integration

Panca

Panidi

Faber

et al. 2023

Adv Funct Materials

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show abstract

“…In order to develop PDs through low cost and low temperature fabrication processes with good operation stability in air, solution-processed metal oxide (M-O) based photoactive thin films synthesized from metal precursors by sol-gel chemistry are considered. Conventionally, high temperature thermal annealing processes are usually needed for promoting the condensation reaction for forming crosslinked M-O network, [29] it is essential to develop technics to lower down the thermal budget [30] of functional sol-gel M-O film on resin based substrates. So far, low temperature annealing processes including the adoption of deep-ultraviolet (DUV) light for activating photochemical reaction [31][32][33][34][35] or light absorber doping for efficiently extracting heat during NIR laser irradiation [36] has been proposed to realize low temperature sol-gel M-O film curing.…”

Section: Doi: 101002/admt202201026mentioning

confidence: 99%

NIR Laser Integration of Photodetector on 3D Printed Chamber for Colorimetric Biosensing

Lin

Chang

Noel

et al. 2022

Adv Materials Technologies

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In this work, gold nanoparticles (Au NPs)/indium‐zinc‐oxide (IZO) nanocomposite visible photodetector (PD) is directly prepared by near‐infrared (NIR) laser‐annealing on a 3D‐printed substrate to form an integrated colorimetric sensor. After a surface planarization process, using a low power laser treatment without damaging the substrate, Au NPs are formed from the Au thin layer (6 nm) on 3D‐printed resin substrate by laser‐assisted dewetting process. Also, the UV–vis photoresponsivity is compared by tuning different NIR laser power intensity for sol‐gel IZO curing. By investigating the temperature profile of each laser annealing process and the surface morphology of Au NPs/IZO nanocomposite film, the optimized PD is then integrated with a 3D‐printed sensing chamber for successfully demonstrating urea detection varied from 1, 5, 10, 25 and 50 × 10−3 m, which refer to the salivary urea concentrations for healthy and chronic kidney disease groups.

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“…From these technical backgrounds, the introduction of AOS channel thin film transistor (TFT) has been pursued to reduce the cell footprint and open the possibility of stacking individual cells. − For developing and characterizing the devices with nanoscale AOS channels, the device feasibility should be urgently explored for potential implementation of highly scaled devices in future logic and memory applications. There have been several approaches to implement short-channel oxide TFTs, such as 3D vertical or self-aligned coplanar structures. − Alternatively, during the progress of device scaling for the AOS TFTs, short-channel effects (SCEs) of the fabricated devices should be fairly evaluated. , Particularly, the gate-stack formation conditions and process steps are major concerns to be carefully designed.…”

Section: Introductionmentioning

confidence: 99%

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

Bae

Yang

Kim

et al. 2022

ACS Appl. Mater. Interfaces

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Roles of oxygen interstitial defects located in the In–Ga–Zn-O (IGZO) thin films prepared by atomic layer deposition were investigated with controlling the cationic compositions and gate-stack process conditions. It was found from the spectroscopic ellipsometry analysis that the excess oxygens increased with increasing the In contents within the IGZO channels. While the device using the IGZO channel with an In/Ga ratio of 0.2 did not show marked differences with the variations in the oxidant types during the gate-stack formation, the device characteristics were severely deteriorated with increasing the In/Ga ratio to 1.4, when the Al2O3 gate insulator (GI) was prepared with the H2O oxidants (H2O–Al2O3) due to a higher amount of excess oxygen in the channel. Additionally, during the deposition process of the Al-doped ZnO (AZO) gate electrode (GE) replacing from the indium–tin oxide (ITO) GE, the thermal annealing effect at 180 °C facilitated the passivation of oxygen vacancy and the strengthening of metal–oxygen bonding, which could stabilize the TFT operations. From these results, the gate-stack structure employing O3-processed Al2O3 GI (O3–Al2O3) and AZO GE (OA) was suggested to be most suitable for the device using IGZO channel with a higher In content. On the other hand, the device employing H2O–Al2O3 GI and AZO GE exhibited larger negative shifts of threshold voltage (V TH) under positive-bias-temperature stress (PBTS) condition than the device employing O3– Al2O3 GI and ITO GE due to larger hydrogen contents within the gate stacks. Anomalous negative shifts of V TH were accelerated with increasing the In contents of the IGZO channel. When the channel length of the fabricated device were scaled down to submicrometer regime, the OA gate stacks successfully alleviated the short-channel effects.

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Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors

Abstract: The review highlights low temperature activation processes for high performance n-type metal oxide semiconductors for TFTs.

Cited by 45 publications

References 156 publications

Flexible Oxide Thin Film Transistors, Memristors, and Their Integration

Flexible Oxide Thin Film Transistors, Memristors, and Their Integration

NIR Laser Integration of Photodetector on 3D Printed Chamber for Colorimetric Biosensing

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

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