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Results of experimental measurements and theoretical analysis are presented for the TiAu/ZnS/CdTe/HgCdTe metal–insulator–semiconductor heterostructure. The passivation of HgCdTe is provided by a double layer consisting of a dielectric ZnS placed on top of an epitaxial CdTe layer. Both HgCdTe and CdTe were grown by metalorganic chemical vapor deposition. Two types of CdTe layers were investigated: one was grown directly, in situ, immediately following the growth of HgCdTe; the second was grown indirectly using previously grown HgCdTe samples. It is shown that directly grown CdTe layers lead to low fixed interface charge, which is a good condition for passivation. The indirectly grown samples are still acceptable, but not as good as the directly grown samples. We demonstrate, on the basis of theoretical considerations, that the dielectric ZnS improves the flatband condition at the CdTe/HgCdTe interface.

A key factor in improving quantum dots electrical properties and dots-based devices is the ability to control the crucial parameters of composition, doping, size, and strain distribution of the dots. We show that nanometer-scale work function measurements using ultrahigh vacuum Kelvin probe force microscopy is capable of measuring the strain and composition variations within and around individual QDs. This is accomplished by analyzing the detailed surface potential profiles in and around InSb/GaAs dots.

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