In
                As
                Sb
                ∕
                Ga
                Sb
           heterostructure based mid-wavelength-infrared detector for high temperature operation

Sharabani, Y.; Paltiel, Yossi; Sher, A.; Raizman, A.; Zussman, A.

doi:10.1063/1.2746951

Cited by 33 publications

(19 citation statements)

References 17 publications

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“…We have previously reported preliminary results of this work [16]. The investigated structure is a simple two layers heterostructure.…”

Section: Introductionmentioning

confidence: 97%

GaSb/InAsSb heterostructure MWIR detector for high temperature operation

Sharabani¹,

Paltiel²,

Sher³

et al. 2008

SPIE Proceedings

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InAsSb is a promising material for high operating temperature MWIR detectors. InAsSb p-n junction detectors dark current is g-r limited in the lower temperature range and diffusion limited in the higher ones. In this work we have investigated the properties GaSb / InAs 0.91 Sb 0.09 heterostructure and its performance as a sensitive MWIR photodetector. The heterostructure was obtained by MOCVD growth of lattice matched, unintentionally doped layer of InAsSb on NGaSb substrate. This rectifying N-n heterostructure has the unique type II broken gap interface. I-V and spectral response were measured at various temperatures in the range 20-300 K. The BLIP temperature was found to be 180 K. R 0 A product of 2.5 and 180 Ω·cm 2 were measured at 300 and 180 K, respectively. Dual color detection was demonstrated. The range of spectral response, due to light absorption in GaSb or in InAsSb can be determined by the applied bias. An optical gain larger than one was observed at temperatures below 120 K. High detectivity values of 1.3·10 10 and 4.9·10 9 cm·Hz 1/2 W -1 at 180 and 300 K respectively were measured.

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“…We have previously reported preliminary results of this work [16]. The investigated structure is a simple two layers heterostructure.…”

Section: Introductionmentioning

confidence: 97%

GaSb/InAsSb heterostructure MWIR detector for high temperature operation

Sharabani¹,

Paltiel²,

Sher³

et al. 2008

SPIE Proceedings

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“…5,6 The lattice parameter a 0 of GaSb nearly matches that of the solid solutions of ternary and quaternary III-V compounds commonly referred to as the 6.1-Å semiconductor family, which includes, besides GaSb with a 0 of 6.0954 Å , InAs with a 0 equal to 6.0584 Å and AlSb with a 0 of 6.1355 Å , as illustrated in Fig. 1.…”

Section: Introductionmentioning

confidence: 94%

Study of Surface Treatments on InAs/GaSb Superlattice LWIR Detectors

Kutty

Plis

Khoshakhlagh

et al. 2010

Journal of Elec Materi

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We report on the comparison of mesa sidewall profiles of InAs/GaSb strainedlayer superlattice (SLS) detector structures (k 50% cutoff % 14 lm at V bias = 0 V and T = 30 K) obtained after (a) a conventional BCl 3 -based inductively coupled plasma etch, (b) a chemical etch (H 2 O 2 :HCl:H 2 O, 1:1:4), and (c) a combination of both etches. We found that the smoothest sidewall profile with reasonable undercut ($5 lm) was obtained after chemical etch only. The chemical etch was optimized primarily using an n-type GaSb substrate. During this process, numerous chemical etchants were examined. GaSb n-type substrates were chosen for this study in preference over InAs substrates due to their high chemical reactivity and the complicated composition of the native oxide. In addition, SLS detectors are usually grown on GaSb substrates and, after hybridization of the focal-plane array to the readout integrated circuit, the GaSb substrate is etched away using a combination of wet and dry etching techniques. We found that H 2 O 2 :HCl:H 2 O (1:1:4) etching solution provided the smoothest etched surface of GaSb, with a root-meansquare roughness of 1.59 nm.

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“…HgCdTe has been the dominant material system for such applications. Recently, the interest has also been drawn to the development of the uncooled photodetectors using InAsSb materials which offer the capability of covering the whole IR range of 3-14 mm at room temperature (RT) [1][2][3]. As a III-V compound, InAsSb is expected to have superior properties over HgCdTe benefited from its stronger covalent bonding.…”

Section: Introductionmentioning

confidence: 99%

High quality of InAsSb epilayer with cutoff wavelength longer than 10μm grown on GaAs by the modified LPE technique

Sun

et al. 2009

Journal of Crystal Growth

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In As Sb ∕ Ga Sb heterostructure based mid-wavelength-infrared detector for high temperature operation

Cited by 33 publications

References 17 publications

GaSb/InAsSb heterostructure MWIR detector for high temperature operation

GaSb/InAsSb heterostructure MWIR detector for high temperature operation

Study of Surface Treatments on InAs/GaSb Superlattice LWIR Detectors

High quality of InAsSb epilayer with cutoff wavelength longer than 10μm grown on GaAs by the modified LPE technique

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