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An ultrafast compact classical Mott detector is described. The efficiency of the polarimeter is epsilon = 6 x 10(-4) and the maximum counting rate approximately 2000 kcps. The Mott polarimeter employs photomultipliers with scintillators as electron energy sensitive detectors with low dark noise. The photomultipliers and scintillators are placed in vacuum. With this choice of technology, it will be possible to build a classical Mott detector with a bulk size of cubic decimeter in the future.

Previous experiments have demonstrated that carbon nanoisland films (or disordered quantum-dot arrays) deposited on silicon wafers may possess the property of low-field electron emission. This paper presents our new work on comparative characterization of emitting and nonemitting thin carbon films. The experimental results acquired by Auger spectroscopy, electron energy loss spectroscopy, Anderson's technique for workfunction measurement, and secondary-emission techniques confirmed that the emitting films are discontinuous and consist of carbon in sp2-hybridization state, while their workfunction is relatively high (>4 eV). These experimental data clearly contradict the commonly accepted Fowler–Nordheim theory of field emission and suggest that the observed emission phenomenon has a different nature. A novel model is proposed as a development of the well-known hot-electron emission mechanism supplemented with nanoscale-related features of thermoelectric phenomena.

Self-polarization of Pb(Ti1−xZrx)O3 (PZT) thin films is explained on the basis of the formation of a TiO2−x-enriched interlayer close to the bottom electrode. Electrons provided by oxygen vacancies generate a n-type interface layer in the PZT at the electrode. A graded ferroelectric layer is then formed by electron injection from the bottom electrode and electron trapping on Ti4+ ions. A “built-in” difference in free energy forms which acts to pole the ferroelectric. Band bending was observed by contact potential difference measurements at a distance of 70 to 90 nm from the bottom electrode.

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As previously demonstrated, non-diamond carbon (NDC) films deposited at low temperatures 200-300 °C on silicon tips reduced the threshold of field emission. In this paper we will present the results of the study of field emission from flat NDC films prepared by VHF CVD. Emission measurements were performed in a diode configuration at approximately 10−10 Torr. NDC films were deposited on ceramic and on c-Si substrates sputter coated with layers of Ti, Cu, Ni and Pt. The back contact material influences the emission characteristics but not as a direct correlation to work function. A model of field emission from metal-NDC film structures will be discussed.

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