Electron-beam-induced conductivity in self-organized silicon quantum wells

Changing of Transport of Charge Carriers in an Implanted-junction Heterorectifier under the influence of Mismatch-induced Stress

“…Approximations of the second and higher orders of components of displacement vector could be determined by using standard replacement of the required components in the right sides of Eqs. (9) on the following sums i+ui(x,y,z,t) [11,12,19,21]. The replacement leads to the following result…”

“…To solve this problem, one can search new materials with higher values of charge carrier's mobility [4][5][6][7]. Another way to decrease the switching time is increasing of sharpness of p-n-junction [8,9]. Earlier it was shown that manufacturing of p-n-junctions by diffusion or ion implantation in a heterostructure and optimization of annealing time of dopant and/or radiation defects make it possible to increase sharpness of the above p-njunctions [10][11][12].…”