Ultrashallow p +-n junctions in silicon (100): Electron-beam diagnostics of the surface zone

On Optimization of Manufacturing Planar Double-Base Heterotransistors To Decrease Their Dimensions

“…where D L (x,y,z,T) is the spatial (due to presents several layers in heterostructure) and temperature (due to Arrhenius law) dependences of dopant diffusion coefficient; P (x,y,z,T) is the limit of solubility of dopant; parameter γ depends on properties of materials and could be integer in the following interval γ ∈ [1,3] [13]; V (x,y,z,t) is the spatio-temporal distribution of concentration of radiation vacancies; V * is the equilibrium distribution of concentration of vacancies. Concentrational dependence of dopant diffusion coefficient has been described in details in [13].…”

“…One way to increase performance of the solid state electronic devices is searching materials with higher charge carriers mobility [1][2][3]. Another way to increase the performance is development of new or optimization of existing technological processes [4][5][6][7].…”

On Approach to Manufacture of a Horizontal Complementary Field-Effect Heterotransistor with Common Gate

“…[1][2][3][4][5][6][7][8][9][10][11][12] To increase degree of integration of elements of integrated circuits are elaborating new technological processes and optimizing of existing one. [1][2][3][4][5][6][7][8][9][10][11][12] Two of traditionally using technological processes are laser and microwave types of annealing. [13][14][15][16][17][18] In this case it is practicably to optimize frequency of laser pulses and time of microwave type annealing.…”

Optimization of annealing of dopant to increase sharpness of p–n junctions in a heterostructure with drain of dopant

“…The second way for intensive elaboration is refinement of characteristics of traditional solid state electronic devices (EsmaeiliRad et al 2007;Huang et al 2003;Lai et al 2007;Kitada et al 2009;Lei et al 2009;Volocobinskaya et al 2001;Vasil'ev et al 2002). One of the questions of the refinement is increasing of sharpness of p-n junctions and manufacturing the devices as more shallow (Andronov et al 1998;Sisiyany et al 2002). One way to increase sharpness of p-n junction is using laser annealing (Varonina et al 1999;Pankratov 2005).…”