On Optimization of Manufacturing Planar Double-Base Heterotransistors To Decrease Their Dimensions

Abstract

In this paper we consider an approach of manufacturing of double-base heterotransistors to decrease their dimensions. Framework the approach it should be manufactured a heterostructure with specific configuration. Farther it is necessary to dope certain areas of the heterostructure by diffusion or by ion implantation. After finishing of the doping process the dopant and/or radiation defects should be annealed. We consider an approach of optimization of dopant and/or radiation defects for manufacturing more compact doublebase heterotransistors. KEYWORDS Field-effect heterotransistors; double-base heterotransistors; increasing of integration rate