This paper presents the status of high-speed SiGe BiCMOS technologies at STMicroelectronics. Process and electrical characteristics of two 120-nm platforms, qualified or under development, are presented together with results demonstrated on optical and millimeter-wave circuits. Advanced developments addressing end-of-roadmap BiCMOS are also presented and discussed.
A robust 0.25pm double-poly SiGe HBT structure using non selective epitaxy has been developed. The device features 70/90GHz fT/fmx with pure SiGe base in 0.25pm BiCMOS technology. Performances up to 120/100GHz fT/fmax are demonstrated for SiGe:C base transistors.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.