A robust 0.25pm double-poly SiGe HBT structure using non selective epitaxy has been developed. The device features 70/90GHz fT/fmx with pure SiGe base in 0.25pm BiCMOS technology. Performances up to 120/100GHz fT/fmax are demonstrated for SiGe:C base transistors.

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We report the fabrication and electrical characterization of high performance 0.25µm SiGe HBTs incorporating a carbon-doped base grown using non selective epitaxy. A transit frequency f T of 97GHz and a maximum oscillation frequency f max of 94GHz have been obtained together with well balanced static parameters. These are the highest frequency performances reported to date for non selective epitaxy SiGe HBTs, including carbon-doped base devices.

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In this contribution we investigate the II. EXPERIMENTAL & TEST STRUCTURES matching properties of modern high-K We studied MIM capacitors processed in 0.25 pim metal-insulator-metal (MIM) capacitors. In particular, (Al BEOL) and 0.13 ptm (Cu BEOL) technologies. The we derive a compact physics-based model in order to high-K insulator was either Ta2O5 deposited by MOCVD or explain the observed geometry dependence of mismatch. A1203 deposited by ALD. In both cases, a standard metal layer This model is successfully applied to MIM devices is used to form the bottom electrode while an extra masking processed with Ta205 and Al203 as dielectrics, step is required for the top electrode. The capacitance per unit area is about 5 ff/4m2 with Ta2O5 and 3.5 fF/4m2 with A1203 Index Terms-Mismatch, capacitors, MIM, high-Kc as dielectric. dielectrics, modeling, matching.We used conventional mismatch test structures, i.e. a set of capacitor pair. The devices of each pair, identically drawn, are closely spaced to avoid gradient effects and