Articles you may be interested inDeveloping small vacuum spark as an x-ray source for calibration of an x-ray focusing crystal spectrometer Rev. Sci. Instrum.An experimental model of a micropinch ͑vacuum spark͒ x-ray source was tested in x-ray lithography and x-ray microscopy applications. The image resolution for the proximity lithography and microscopy methods with the micropinch source was estimated. The proximity lithography with positive and negative resists was tested in vacuum; a protection system, shielding a mask from the discharge plasma blowoff, metallic debris, and extreme ultraviolet ͑EUV͒ radiation, was installed in front of the mask. Images of the biological specimens were also obtained with x-ray resists for one-pulse exposure and a series of pulses. The effect of microrelief leveling ͑polishing͒ of the solid surfaces irradiated by the high-power pulsed soft x-ray/EUV flux was observed experimentally, and an analytical model of the effect was suggested. The effect of structural modification of the thin layers irradiated by the high power EUV flux was predicted, and the transformation of the dielectric buffer layers from the amorphous to the crystalline state was realized experimentally.
Articles you may be interested inDeveloping small vacuum spark as an x-ray source for calibration of an x-ray focusing crystal spectrometer Rev.
An experimental model of an industrial micropinch X-ray source is described on the basis of a low inductance vacuum spark. It was designed and tested for applications in X-ray lithography, X-ray microscopy, surface processing (micro-relief leveling) and structural modification of thin dielectric layers. The error analysis of proximity method and test results confirmed the adequacy of its application to produce microchips for the microelectronic industry with spatial resolution of < 0. 1 L The X-ray microscopy of human and rabbit blood and tissue cells was performed using the proximity shadow printing method with the sensitive polymer detectors or resists. The effect of micro-relief leveling (polishing) of solid surfaces irradiated by EUV and soft X-ray flux was discovered and applied to smooth out the roughness of HTSC films ( high-temperature superconducting ceramic). A theoretical explanation of the effect is discussed. Also, the effect of structural modification of the thin films irradiated by the pulsed X-ray flux was predicted and the transformation of dielectric intermediate buffer layers from amorphous to crystalline state in a series of pulses without the high-temperature annealing was experimentally observed.Keywords: X-ray source, micropinch, proximity lithography, X-ray microscopy, EUV and X-ray flux influence on solids A = (A2 + Am + Ae2)"2 where Ae (6d2 + 6s +ö2)112.The steppers are capable to provide the mechanical accuracy A, 0.03 i. The error Am arises as a result of uneven edge or irregularity of thickness of the patterns near the edges; normally Am < 0.05 t. The X-ray difftaction at the edge of a pattern = 0.5 (Xd5/2)112 0.06 t for X = 1 nm and dg = 30 . The X-ray photons with the energies E below i05 eV are absorbed
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