<title>Micropinch x-ray source and its applications</title>

Abstract

An experimental model of an industrial micropinch X-ray source is described on the basis of a low inductance vacuum spark. It was designed and tested for applications in X-ray lithography, X-ray microscopy, surface processing (micro-relief leveling) and structural modification of thin dielectric layers. The error analysis of proximity method and test results confirmed the adequacy of its application to produce microchips for the microelectronic industry with spatial resolution of < 0. 1 L The X-ray microscopy of human and rabbit blood and tissue cells was performed using the proximity shadow printing method with the sensitive polymer detectors or resists. The effect of micro-relief leveling (polishing) of solid surfaces irradiated by EUV and soft X-ray flux was discovered and applied to smooth out the roughness of HTSC films ( high-temperature superconducting ceramic). A theoretical explanation of the effect is discussed. Also, the effect of structural modification of the thin films irradiated by the pulsed X-ray flux was predicted and the transformation of dielectric intermediate buffer layers from amorphous to crystalline state in a series of pulses without the high-temperature annealing was experimentally observed.Keywords: X-ray source, micropinch, proximity lithography, X-ray microscopy, EUV and X-ray flux influence on solids A = (A2 + Am + Ae2)"2 where Ae (6d2 + 6s +ö2)112.The steppers are capable to provide the mechanical accuracy A, 0.03 i. The error Am arises as a result of uneven edge or irregularity of thickness of the patterns near the edges; normally Am < 0.05 t. The X-ray difftaction at the edge of a pattern = 0.5 (Xd5/2)112 0.06 t for X = 1 nm and dg = 30 . The X-ray photons with the energies E below i05 eV are absorbed