The initial stages (<20 monolayers) of molecular beam epitaxial growth of Ge1−xCx on Si(100) has been studied using both in situ surface analytical techniques and ex situ electron microscopy. The Ge1−xCx films studied had nominal C concentrations of 0.2<x<0.8. In situ reflection high-energy electron diffraction indicates crystalline, layer-by-layer growth for room temperature deposition of lower C concentrations (x<0.4) films and amorphous growth for higher C concentrations. Subsequent high-temperature anneals between 350 and 600 °C caused the Ge and C to phase separate, with the Ge forming defective islands while the C precipitates out of the diamond lattice. Mechanisms leading to the C concentration-dependent island morphologies are suggested.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.