Enhanced shielded-gate trench MOSFETs for high-frequency, high-efficiency computing power supply applications

Sarkar, Tirthajyoti; Challa, A.; Sapp, S.

doi:10.1109/apec.2013.6520257

Cited by 12 publications

(2 citation statements)

References 2 publications

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“…Additionally, C DS1 and C DS2 help to lower the peak overshoot voltage stress on the SGT-MOSFET. This stress comes from circuit parasitic and high dv/dt immunity in switching converter circuits [53]. The terminal capacitance of both devices is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance

Jaiswal

Ramakrishnan

2023

IEEE Access

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This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications. Wherein two parallel gates, and a field plate are introduced vertically on the sidewalls and connected, respectively, to the gate and source. Technology computer-aided design (TCAD) simulator was used in the design process to achieve a specific on-resistance as low as 0.79 mΩ.cm 2 for the device, which has the capacity of blocking voltages up to 600 V. The peak electric field of the PSGT-MOSFET could well be lowered to 2.95 MV/cm, which is about 17% lower than that of a conventional trench gate MOSFET (TG-MOSFET) near the trench corner with help of suitable design and optimization of trench depth, drift doping, and field plate thickness. The TCAD simulation shows that the higher drift doping on the device performance of PSGT-MOSFET produces ∼2× lower switching losses when compared with a similarly rated conventional TG-MOSFET device.INDEX TERMS Vertical GaN, trench MOSFET, split gate, on-resistance, switching loss, TCAD.

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Section: Resultsmentioning

confidence: 99%

An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance

Jaiswal

Ramakrishnan

2023

IEEE Access

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“…Regarding FP-MOSFETs, it is obvious that there is a potential to reduce P CON , P SW(on) , and P SW(off) drastically, and several power loss analysis has been reported so far. [24][25][26][27][28][29][30] However, owing to their structure, the output capacitance (C oss ) which leads to P Qoss is a significant issue, especially in the case of megahertz switching. 31) In this paper, we describe a structure-based capacitance model of the FP-MOSFET, which was proposed in a related report, 32) to estimate power loss under various conditions.…”

Section: Introductionmentioning

confidence: 99%

Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET

Kobayashi

Sudo

Omura

2018

Jpn. J. Appl. Phys.

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Field-plate trench MOSFETs (FP-MOSFETs), with the features of ultralow on-resistance and very low gate-drain charge, are currently the mainstream of high-performance applications and their advancement is continuing as low-voltage silicon power devices. However, owing to their structure, their output capacitance (C oss ), which leads to main power loss, remains to be a problem, especially in megahertz switching. In this study, we propose a structure-based capacitance model of FP-MOSFETs for calculating power loss easily under various conditions. Appropriate equations were modeled for C oss curves as three divided components. Output charge (Q oss ) and stored energy (E oss ) that were calculated using the model corresponded well to technology computer-aided design (TCAD) simulation, and we validated the accuracy of the model quantitatively. In the power loss analysis of FP-MOSFETs, turn-off loss was sufficiently suppressed, however, mainly Q oss loss increased depending on switching frequency. This analysis reveals that Q oss may become a significant issue in next-generation high-efficiency FP-MOSFETs.

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Corner and Statistical SPICE Model Generation for Shielded-Gate Trench Power MOSFETs Based on Backward Propagation of Variance

Xiao

Victory²,

Pearson

et al. 2019

2019 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Enhanced shielded-gate trench MOSFETs for high-frequency, high-efficiency computing power supply applications

Cited by 12 publications

References 2 publications

An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance

An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance

Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET

Corner and Statistical SPICE Model Generation for Shielded-Gate Trench Power MOSFETs Based on Backward Propagation of Variance

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