Self-aligned High Density Low Voltage P-Channel Trench MOSFET with Ultra Low Resistance and Robust Ruggedness

Kocon, C.; Challa, A.; Thorup, P.

doi:10.1109/ispsd.2006.1666081

Cited by 4 publications

(2 citation statements)

References 1 publication

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“…Recently, much attention has been given to low-voltage power metal-oxide-semiconductor field-effect transistor (MOSFET) (PowerMOS) because of the numerous portable devices on the market and related applications. 1) The cost of fabricating a trench PowerMOS is very important. Current studies on the low-voltage trench PowerMOS have focused on the reduction of device pitch by shrinking the design rules, including trench width, source contact size and trenchto-source contact spacing.…”

Section: Introductionmentioning

confidence: 99%

Trench Termination Design and Analysis in Low-Voltage N-Channel Trench Power Metal–Oxide–Semiconductor Field-Effect Transistor

Liaw¹,

Yeh²,

Lin³

et al. 2008

jjap

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In this study, a novel termination is designed in a low-voltage N-channel trench power metal-oxide-semiconductor fieldeffect transistor (MOSFET) to simplify the fabricating process. In a conventional trench power-MOSFET (PowerMOS), a field oxide with a metal field plate is often used for edge termination. The field oxide only exists in the termination region of the trench PowerMOS; therefore if the termination can be designed without the field oxide, field oxidation can be removed from the fabrication. Trench termination is proposed in this work to replace field oxide termination. The use of multiple trench rings leads to the desired breakdown voltage. The temperature effect in trench termination must be considered owing to the negative coefficient of the threshold voltage (V TH ) of the P-type MOS (PMOS) and the temperature. This work also provides a design guideline for trench termination in the low-voltage trench PowerMOS.

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Section: Introductionmentioning

confidence: 99%

Trench Termination Design and Analysis in Low-Voltage N-Channel Trench Power Metal–Oxide–Semiconductor Field-Effect Transistor

Liaw¹,

Yeh²,

Lin³

et al. 2008

jjap

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“…The trench contact structures with metal plug were reported [1][2][3], and 1.6-2.0 ptm cell pitches were realized [4][5]. The self-aligned contact structures filled with interlayer dielectric above poly-silicon gate in the trench were also presented [6][7][8], and the narrow trench structures around 1.0 ptm pitch were realized in p-channel MOSFET [9] and accumulation-mode MOSFET [10].…”

Section: Introductionmentioning

confidence: 99%

Sub-micron Cell Pitch 30 V N-channel UMOSFET with Ultra Low On-resistance

Kobayashi

Kaneko

Murase

et al. 2007

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's

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We developed new sub-micron cell pitch 30 V n-channel UMOSFET with ultra low on-resistance. In the UMOSFET structure, we adopted a layered oxide as interlayer dielectric and equalized the width to the trench gate width to realize the narrow unit cell pitch (<1.0 gm). We optimized layout dimensions for new rectangular cell design and stripe design. As a result, we achieved the lowest specific on-resistance (Rsp) of 4.3 mQmm2 at Vgs=10 V and 5.0 mQmm2 at Vgs=4.5 V in 30 V class for the fabricated rectangular cell UMOSFET.

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High Density Bidirectional Lithium Ion Battery Disconnect Switch With Ultralow Specific On-Resistance

Fang

Chen

Qiao

et al. 2022

2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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Self-aligned High Density Low Voltage P-Channel Trench MOSFET with Ultra Low Resistance and Robust Ruggedness

Cited by 4 publications

References 1 publication

Trench Termination Design and Analysis in Low-Voltage N-Channel Trench Power Metal–Oxide–Semiconductor Field-Effect Transistor

Trench Termination Design and Analysis in Low-Voltage N-Channel Trench Power Metal–Oxide–Semiconductor Field-Effect Transistor

Sub-micron Cell Pitch 30 V N-channel UMOSFET with Ultra Low On-resistance

High Density Bidirectional Lithium Ion Battery Disconnect Switch With Ultralow Specific On-Resistance

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