The Effects of Double-Epilayer Structure on Threshold Voltage of Ultralow Voltage Trench Power MOSFET Devices

Wang, Qi; Li, Minhua; Sharp, Joelle; Challa, A.

doi:10.1109/ted.2007.891298

Cited by 10 publications

(2 citation statements)

References 1 publication

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“…In the power device sphere, the lowest threshold voltage that a power MOSFET can achieve is limited by the threshold voltage variation [4]. Especially in the conventional vertical power U-MOSFET as shown in Fig.…”

Section: New Process Conceptmentioning

confidence: 99%

A laser annealing process for high-performance power MOSFETs

Chen

Noguchi

2014

2014 International Workshop on Junction Technology (IWJT)

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We propose a new laser annealing process for forming P-Base-Junction (Here, P represents the type of impurity) in the trench gate power MOSFETs (Metal Oxide Semiconductor Field Effect Transistor). An equivalent shallow junction structure for P-Base-Junction with uniform impurity distribution is achieved by the green laser annealing process of pulse mode. By comparing the laser annealing with conventional RTA (Rapid Thermal Annealing), lower sheet resistance and higher impurity activation in the shallow junction have been confirmed.

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Section: New Process Conceptmentioning

confidence: 99%

A laser annealing process for high-performance power MOSFETs

Chen

Noguchi

2014

2014 International Workshop on Junction Technology (IWJT)

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“…When required device rating voltage is up to 50-100 V, single-EPI device makes this scheme suffer a sharply increased R on . A double-EPI-layers structure was used to improve device R on characteristics in some studies [29,30]. Compared to the single-EPI one, the double-EPIs device has a higher device output current than the single one.…”

Section: Introductionmentioning

confidence: 99%

150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers

et al. 2020

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A rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide- semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied. In order to reduce the specific on-resistance (Ron,sp) of a 150 and 200 V SGT power MOSFET, we used a multiple epitaxies (EPIs) structure to design it and compared other single-EPI and double-EPIs devices based on the same fabrication process. We found that the bottom epitaxial (EPI) layer of a double-EPIs structure can be designed to support the breakdown voltage, and the top one can be adjusted to reduce the Ron,sp. Therefore, the double-EPIs device has more flexibility to achieve a lower Ron,sp than the single-EPI one. When the required voltage is over 100 V, the on-state resistance (Ron) of double-EPIs device is no longer satisfying our expectations. A triple-EPIs structure was designed and studied, to reduce its Ron, without sacrificing the breakdown voltage. We used an Integrated System Engineering-Technology Computer-Aided Design (ISE-TCAD) simulator to investigate and study the 150 V SGT power MOSFETs with different EPI structures, by modulating the thickness and resistivity of each EPI layer. The simulated Ron,sp of a 150 V triple-EPIs device is only 62% and 18.3% of that for the double-EPIs and single-EPI structure, respectively.

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Investigation of performance optimized power trench MOSFETs With Double-Epilayer

Feng

2011

2011 International Conference on Advanced Power System Automation and Protection

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The Effects of Double-Epilayer Structure on Threshold Voltage of Ultralow Voltage Trench Power MOSFET Devices

Cited by 10 publications

References 1 publication

A laser annealing process for high-performance power MOSFETs

A laser annealing process for high-performance power MOSFETs

150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers

Investigation of performance optimized power trench MOSFETs With Double-Epilayer

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