Abstract-Precision electrical trimming of stacked Si/SiGe polycrystalline resistors available from the extrinsic base structure of a SiGe BiCMOS technology has been demonstrated for the first time. It is shown that pulse current trimming techniques can be used to trim the poly-SiGe resistors by up to 50% from their original values with accuracy better than 0.5%. The temperature coefficient of resistance (TCR) is shown to be linearly proportional to the percent change in electrically trimmed poly-SiGe resistance. Finally, we demonstrate resistance cycling using an electrical trim/recovery sequence, indicating that the technique is reversible and is governed by dopant segregation/diffusion mechanisms. The results are consistent with those obtained on conventional polysilicon resistors suggesting that the introduction of a strained SiGe layer does not adversely affect the electrical trim properties of these resistors.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.