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IONIC INSTABILITIESwhere it has little effect on VFB, and the negative charge, now at the SiO2-Si interface, is the controlling factor. So, when the free run component occurs, this negative charge now moves rapidly to the metal-SiO2 interface, lowering the VrB just as rapidly, causing the rapid movement as seen in Fig. 7.These results, however, were somewhat scattered. Although the characteristics shown in Fig. 6 and 7 were quite typical, the speed of the movements varied widely, indicating a somewhat unpredictable mobility of the negative charge. Another factor of note is that these rapid changes did not occur until after the devices were put under a long term bias.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 142.58.129.109 Downloaded on 2015-05-31 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 142.58.129.109 Downloaded on 2015-05-31 to IP

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