Sodium distribution in thermal oxide on silicon by radiochemical and MOS analysis

Yon, E.; Ko, Wen H.; Kuper, A. B.

doi:10.1109/t-ed.1966.15680

Cited by 131 publications

(52 citation statements)

References 9 publications

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“…The increased temperature of 250 °C is accelerating the movement of the Na atoms and so accelerates the recovery process as well. In the oxide layer Na is relatively mobile [14,15] and will spread over the solar cell surface leading to a constant low Na concentration in the oxide layer near the stacking fault. In addition, Na can also diffuse back into the SiN layer (slower process) were it converts again to Na ions.…”

Section: The Thermal Recovery Modelmentioning

confidence: 99%

Sodium Outdiffusion from Stacking Faults as Root Cause for the Recovery Process of Potential-induced Degradation (PID)

et al. 2014

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Section: The Thermal Recovery Modelmentioning

confidence: 99%

Sodium Outdiffusion from Stacking Faults as Root Cause for the Recovery Process of Potential-induced Degradation (PID)

et al. 2014

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“…This has been shown to be consistent with the presence of mobile cations only (1,2). In the previous paper the location of the anionic charges terminating those of the mobile cations was not specified.…”

mentioning

confidence: 72%

Cationic Migration in Silicon Dioxide Films on Silicon

Collins¹,

Schrager²

1967

J. Electrochem. Soc.

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Earlier calculations of the electrostatic potential and cationic concentration profiles in metal-oxide semiconductor structures on the basis of the PoissonBoltzmann equation are extended to the case where a maximum in potential exists in the oxide film. The presence of immobile anions terminating the cationic charges does not significantly affect the behavior of the cations if the anions are located in a thin region at the oxide-metal interface. According to this model the currents due to cationic drift in temperature-bias experiments are symmetrical about the contact potential difference between the metal and the semiconductor corrected for the space charge of the immobile anions. For a model involving cationic drift only, the flat band potential of the semiconductor from temperature bias measurements does not display this symmetry about the contact potential difference. Transient nonequilibrium distributions of the cations at low values of the applied potential which may occur because of the existence of the potential maximum in the film are discussed.The variation of the fiat band potential of oxidized silicon surfaces in metal-oxide-semiconductor (MOS) devices following temperature-bias treatments have been interpreted in terms of a drift of mobile cations (1-2). This interpretation is supported by the fact that the charge storage calculated from the ionic current-time integrals in the temperature-bias experiments is in general agreement with the observed shifts of the flat band potential as determined by C-V measurements at room temperature of temperature biased samples (3).In an earlier paper (2), the electrostatic potential and cationic concentration profiles in a silicon dioxide film under specified values of applied bias at elevated temperatures were developed in terms of a PoissonBoltzmann distribution of a cationic species. The previous calculations (2) were confined to the case of large values of the applied potential relative to the potential difference arising from the space charge of the cations. The alternative case is treated in the present paper. The solution exhibits a potential maximum at low values of the applied potential compared to the space charge potential.One of the interesting and well-known characteristics of the silicon dioxide-silicon MOS devices is that while a positive potential applied to the metal electrode in a temperature-bias treatment produces large negative shifts of the silicon surface potential, the application of negative potentials to the metal electrode does not produce a negative shift. This has been shown to be consistent with the presence of mobile cations only (1, 2). In the previous paper the location of the anionic charges terminating those of the mobile cations was not specified. In the present paper, the behavior of a model in which the cations are electrically compensated by immobile anions near the oxide metal interface is investigated. Where the thickness of the sheet of anions is a small fraction of the thickness of the oxide film, it is found that the pote...

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“…Manuscript submitted Jan. 2, 1969; revised manuscript received May 7, 1969. This was Paper 522 presented at the Montreal Meeting, Oct. [6][7][8][9][10][11]1968.…”

Section: Discussionmentioning

confidence: 99%

“…The distribution of this contaminant in these films and on cleaned silicon surfaces has been studied by flame emission, radiotracer, and neutron activation analytical methods (7)(8)(9)(10)(11). The main source of this impurity has been suggested to be the furnace tube and liner in which oxidation and diffusion reactions occur (4).…”

mentioning

confidence: 99%

Determination of Sodium in Furnace Atmospheres by Atomic Absorption Spectroscopy

Burgess¹,

Donega²

1969

J. Electrochem. Soc.

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The extremely low sodium vapor pressures which are present in hot quartz furnace tube atmospheres have been measured by atomic absorption spectroscopy. In the system described, sodium vapor pressures are measured between 10 -6 and l0 -9 Torr; however, this range can be extended by simple changes in optics and/or absorption cell length. The data show that the sodium vapor pressure in a new quartz tube changes slowly during heating until the rate of sodium in-diffusing from the hot ceramic liner is balanced by the rate of sodium out-diffusing to the cooler portions of the system. If the design of the furnace tube system is such that the source of the sodium, the furnace liner, is separated by an air space from the inner quartz tube, then the equilibrium sodium vapor pressure inside this tube may be decreased at least tenfold. Foreign gas composition has little effect on the sodium vapor pressure, providing no chemical reactions occur in the system. However, the reaction of hydrogen with the quartz surface results in a marked increase in the sodium vapor pressure. The system described may be easily adapted for determination of other contaminant vapors which could be present in hot quartz furnace tube atmospheres~

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Sodium distribution in thermal oxide on silicon by radiochemical and MOS analysis

Cited by 131 publications

References 9 publications

Sodium Outdiffusion from Stacking Faults as Root Cause for the Recovery Process of Potential-induced Degradation (PID)

Sodium Outdiffusion from Stacking Faults as Root Cause for the Recovery Process of Potential-induced Degradation (PID)

Cationic Migration in Silicon Dioxide Films on Silicon

Determination of Sodium in Furnace Atmospheres by Atomic Absorption Spectroscopy

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