Self-Diffusion in Copper

Kuper, A. B.; Letaw, Harry; Slifkin, Lawrence; Sonder, E.; Tomizuka, C. T.

doi:10.1103/physrev.96.1224

Cited by 187 publications

(29 citation statements)

References 9 publications

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“…Hence the temperature instabilities of sub-micron unit cell structures can be similarly addressed for metals that in those respects show a similar behaviour to Ni, 37 such as Co, 43 or for metals, that require higher growth temperatures but have lower self-diffusivities, such as Pt. [44][45][46] For metals, such as Cu, that require higher temperatures for graphene growth and have high self-diffusivities (3 orders of magnitude higher for Cu than Ni at 900 °C), 47,48 successfully applying our approach may be more challenging. Nonetheless there are further avenues to increase template stability for instance by plasma precoating.…”

Section: Fig 3 (A) Raman Spectra Of: Graphene On a 500 Nm Thick Ni mentioning

confidence: 99%

Chemical vapour deposition of freestanding sub-60 nm graphene gyroids

Cebo

Aria

Dolan

et al. 2017

Applied Physics Letters

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The direct chemical vapour deposition (CVD) of freestanding graphene gyroids with controlled sub-60 nm unit cell sizes is demonstrated. Three-dimensional (3D) nickel templates were fabricated through electrodeposition into a selectively voided triblock terpolymer. The high temperature instability of sub-micron unit cell structures was effectively addressed through the early introduction of carbon precursor, which stabilizes the metallized gyroidal templates. The as-grown graphene gyroids are self-supporting and can be transferred onto a variety of substrates. Furthermore they represent the smallest free standing graphene 3D structures yet produced with a pore size of tens of nm, as analysed by electron microscopy and optical spectroscopy. We discuss the generality of our methodology for the synthesis of other types of nanoscale, 3D graphene assemblies and the transferability of this approach to other 2D materials.

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Section: Fig 3 (A) Raman Spectra Of: Graphene On a 500 Nm Thick Ni mentioning

confidence: 99%

Chemical vapour deposition of freestanding sub-60 nm graphene gyroids

Cebo

Aria

Dolan

et al. 2017

Applied Physics Letters

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“…This behavior was observed both with and without a time dependence in D,. Above 800 "C the slopes of the log 2y vs. t plots were evaluated for given temperature and used to calculate the surface diffusion coefficient 0,; the volume diffusion part C 09 was subtracted according to (4) using the values for the volume diffusion coefficient D, measured by Kuper et al [9]. The data thus obtained for D, show a discontinuity a t NN 910 "C in the Arrhenius plot and can be expressed by (Fig.…”

Section: Resultsmentioning

confidence: 99%

Surface self‐diffusion measurements on copper

Bonzel

Gjostein

1968

Physica Status Solidi (b)

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The decay kinetics of sinusoidal surface profiles on copper annealed in a hydrogen atmosphere were investigated in the temperature range 600 to 1030 "C in order to determine the temperature dependence of the surface self-diffusion coefficient, D,. Below 910 "C the surface profiles were found to be faceted resulting in an apparent discontinuity in D, which can be understood in terms of the y-plot of copper. The discontinuity in the diffusion data can be expressed by the following equations:At temperatures below 800 "C D, is dependent on the annealing time, and in the vicinity of 600 "C, D, drops drastically below the minimum value that can be measured. This behavior can be explained in terms of the rate theory for a bimolecular surface reaction between impurities and diffusing defects.

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“…There are not enough Cu atoms to fill the interfacial vacancies because the Cu self-diffusion Interfacial Microstructure and Growth Kinetics of Intermetallic Compound Layers in Sn-4 wt.%Ag/Cu-X (X = Zn, Ag, Sn) Couples rate is very low. 21 Therefore, one obtains J out Cu > J in Cu , and J V > 0. So Kirkendall voids form at the Cu/ Cu 3 Sn interface, as demonstrated in Fig.…”

Section: Formation Of Voids At the Interfacesmentioning

confidence: 95%

Interfacial Microstructure and Growth Kinetics of Intermetallic Compound Layers in Sn-4 wt.%Ag/Cu-X (X = Zn, Ag, Sn) Couples

Zou

Zhang

2011

Journal of Elec Materi

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In the current study, the interfacial microstructures of Sn-Ag/Cu-X alloy (X = Ag, Sn or Zn) couples were investigated. The experimental results confirm that addition of Ag or Zn can effectively suppress the growth of the Cu 3 Sn layer, while addition of Sn accelerates the growth of the Cu 3 Sn layer. Meanwhile, the formation of voids is effectively suppressed by alloying the Cu substrate. The disappearance of voids and the absence of the Cu 3 Sn layer were well explained in terms of the phase diagram and the diffusion flux: the Cu 3 Sn phase is a nonequilibrium phase based on the Sn-Cu-Zn ternary phase diagram, since a high-Zn region is formed at the Cu 6 Sn 5 /Cu-Zn alloy interface; in addition, the high Sn diffusion flux in the Cu 6 Sn 5 can suppress the growth of Cu 3 Sn and the formation of voids.

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Self-Diffusion in Copper

Cited by 187 publications

References 9 publications

Chemical vapour deposition of freestanding sub-60 nm graphene gyroids

Chemical vapour deposition of freestanding sub-60 nm graphene gyroids

Surface self‐diffusion measurements on copper

Interfacial Microstructure and Growth Kinetics of Intermetallic Compound Layers in Sn-4 wt.%Ag/Cu-X (X = Zn, Ag, Sn) Couples

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