ZnTe–ZnO core–shell radial heterostructures grown by the combination of molecular beam epitaxy and atomic layer deposition

Abstract

ZnTe-ZnO core-shell radial heterostructures were grown using a new method of combining molecular beam epitaxy (MBE) and atomic layer deposition (ALD). Zinc telluride nanowires (core) were grown on a GaAs substrate using gold catalyzed vapor-liquid-solid mechanism. An atomic layer deposition technique using diethyl zinc and deionized water as precursors was applied for zinc oxide shell formation. The core-shell ZnTe-ZnO heterostructures thus obtained were characterized by scanning electron microscopy, transmission electron microscopy, x-ray diffraction and photoluminescence measurements.

Synthesis and characterization of ZnO/Cu2O core–shell nanowires grown by two-step electrodeposition method

“…Moreover, the conduction band (CB) of p-Cu 2 O is more negative than that of n-ZnO which favors the charge separation and transfer. More recently several works have focused on the synthesis and characterization of type-II core/shell arrays such as ZnO/ZnTe [16,17], ZnO/ZnSe [18][19][20] and ZnO/Cu 2 O [21][22][23]. In our case we are interested in Cu 2 O/ZnO core/shell nanostructures.…”

Zinc oxide for electronic, photovoltaic and optoelectronic applications

“…It is transparent for visible and near infrared light even when heavily n-type doped. We demonstrated recently that the ZnO films grown by the ALD with free electron concentration at RT of 10 20 cm -3 [11,41,42] are suitable for the application as a transparent electrode in photovoltaic devices and in organic light emitting diodes (OLEDs). Moreover, we demonstrated that such films can replace ITO in practical devices.…”

ZnTe nanowires overgrown by atomic layer deposited (Zn,Co) oxides: Raman scattering studies

“…One of the ways to improve NWs based devices is fabrication of nano-heterostructures such as radial structures consisting of a core and a shell built from two different materials providing function integration and novel applications [1][2][3][4]. Since ZnTe with its high band gap of 2.26 eV and easy p-type doping is a very attractive candidate for optoelectronic application it is very interesting to combine this material with other semiconductors, for example magnetic oxides.…”