ZnO:Ga conducting-films grown by DC arc-discharge ionplating

Growth of ZnO :Al by high-throughput CVD at atmospheric pressure

“…The film resistivity (r) is defined as r¼Rd, where the sheet resistance (R) is determined from four-point probe measurements. The resistivity decreases sharply in the initial layer (from 1 O cm at 110 nm to 2 Â 10 À 3 O cm at 260 nm), after which it approaches a plateau value (1 Â 10 À 3 O cm at 1050 nm), associated to the growth of the film bulk [30,31]. Corresponding values of carrier concentration and mobility are also plotted in Fig.…”

Structural and electrical properties of ZnO films on freestanding thick diamond films

“…Although EPMA has deviation in quantitative measurements for light elements, especially for samples with low electrical resistivity, the variation of film content can be implied to a certain extent [19] . From Table 2, it can be seen that the sample with the highest mobility has the lowest Zn/O atomic ratio, which can be concluded that ZnO electrical properties could be related with Zn/O atomic ratio [23][24][25] . Therefore, Zn/O atomic ratio is a very important factor for the electrical properties of ZnO films deposited on FTDF.…”

High-electron-mobility ZnO epilayers grown by plasma-assisted molecular beam epitaxy

“…ZnO is a well-known material for n-type oxide semiconductors, and is commonly used for transparent conducting electrodes [1,2], gas sensors, and surface acoustic devices. In the past several years, ZnO-based materials have been attracting increasing attention because of their applicability to UV light-emitting devices owing to the direct band gap of 3.37 eV at room temperature (RT) and a large exciton binding energy of 60 meV.…”