ZnO-based transparent thin-film transistors

Hoffman, Randy; Norris, B.; Wager, John F.

doi:10.1063/1.1542677

Cited by 1,378 publications

(768 citation statements)

References 13 publications

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“…In addition, ZnO also been employed as a photodetector in the ultraviolet (UV) region of the electromagnetic spectra [10][11][12] as well as in light emitting diodes (LEDs) [13], UV lasers [14], thin films transparent transistors (TFTs) [15], memory devices [16], and transparent conducting oxides for consumer devices [17]. The subject related to the applications of ZnO was boosted with the advantage of the easy synthesis process compared to the other competitive compounds, such as gallium nitride (GaN) and silicon carbide (SiC).…”

Section: Introductionmentioning

confidence: 99%

“…The subject related to the applications of ZnO was boosted with the advantage of the easy synthesis process compared to the other competitive compounds, such as gallium nitride (GaN) and silicon carbide (SiC). Moreover, ZnO can be synthesised through different processes, and films were grown on different low-cost substrates, such as ordinary papers [18], polymers [19,20], slide glasses [15], and silicon wafers [10]. Furthermore, high-quality ZnO can be prepared using simple methods with repeatable characteristics, including methods such as radio frequency (RF) magnetron sputtering [21], low temperature hydrothermal processes [22,23], thermal evaporation [24,25], sol-gel [26], electrodeposition [27], and chemical vapour deposition (CVD) [28].…”

Section: Introductionmentioning

confidence: 99%

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Ultraviolet Sensors Based on Two-Dimensional Zinc Oxide Structures

Al-Hardan¹,

Hamid²,

RoslindaShamsudin³

et al. 2017

Optoelectronics - Advanced Device Structures

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In this chapter, we review the application of zinc oxide (ZnO) in ultraviolet (UV) sensing and emphasise on the two-dimensional (2D) ZnO structures. The synthesis of 2D ZnO structures, the morphologies, and the photoluminescence emission will be reviewed and highlighted. The performance of the UV sensors based on 2D ZnO structures is explored. The lack in the study of the 2D ZnO UV sensors might be due to the difficulties of controlling the growth of the 2D ZnO compared to the one-dimensional (1D) ZnO structures.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultraviolet Sensors Based on Two-Dimensional Zinc Oxide Structures

Al-Hardan¹,

Hamid²,

RoslindaShamsudin³

et al. 2017

Optoelectronics - Advanced Device Structures

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show abstract

“…Th e oxide TFT fever started in 2003 with reports of several crystalline oxide TFTs using ZnO [37][38][39][40] and InGaZnO 4 [41] channels. ZnO TFTs have been studied intensively because this structure is expected to exhibit better performance than a-Si:H and organic TFTs owing to the large Hall mobility (200 cm 2 /V s) of single-crystal ZnO and the ready formation of semiconducting crystalline thin fi lms even on unheated substrates.…”

Section: Brief History Of Aossmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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A morphous semiconductors have created a new area of electronics known as 'giant microelectronics' typifi ed by devices such as solar cells and active-matrix (AM) fl at-panel displays. Single-crystalline semiconductor technology, typifi ed by crystal silicon electronics, is unsuitable for such applications, whereas amorphous or polycrystalline fi lms can be easily formed over large areas of greater than 1 m 2 at low temperature (e.g. < 400 °C) on both glass and plastic substrates, facilitating these new applications. Due to carrier scattering and trapping at defects on grain boundaries in polycrystalline materials (the grain boundary problem), hydrogenated amorphous silicon (a-Si:H) has been used more widely than polycrystalline silicon (p-Si) for practical large-size applications. However, the critical obstacles to be overcome to realize a-Si:H in future applications are low mobility (< 1 cm 2 /V s) and instability against electric stress and photo-illumination.In late 2004, we reported that an amorphous oxide semiconductor (AOS) with the composition a-InGaZnO 4 (a-IGZO) can be applied in the fabrication of fl exible, transparent thin-fi lm transistors (TFTs) having much improved performance compared to conventional TFTs based on a-Si:H and organic materials [1]. AOS materials have superior characteristics to conventional semiconductors, and therefore AOS TFT technology has grown very rapidly toward the realization of TFT backplanes for next-generation flat-panel displays. As summarized in Figure 1, a variety of prototype AM displays have been demonstrated by several companies within the last fi ve years since the fi rst report of AOS TFTs. Herein, we review the unique characteristics of AOS materials in relation to their TFT characteristics, and discuss why AOSs have such attractive electrical properties related to the electronic structures specifi c to transparent oxides. Active-matrix displays and circuits based on AOS TFT arraysTh e fi rst AOS-TFT was reported in late 2004 (see Figure 1). Just one year later, Toppan Printing quickly followed with the fi rst AM display based on AOS as a fl exible black-and-white electronic paper (e-paper) using a-IGZO TFTs

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“…In this regard, recent transparent transistor research efforts have focused on enhancing transparency and flexibility while maintaining or enhancing key TFT performance metrics. There have been several recent reports of transparent transistors fabricated with ZnO, SnO 2 , In 2 O 3 or other semiconducting oxide thin films, or with carbon nanotube networks as the active channel layers and opaque source and drain metals, or with carbon nanotube films and transparent source/drain electrodes [4][5][6][7][8][9][10][11] . However, there have been no reports of fully transparent oxide nanowire transistors (NWTs) fabricated with all-transparent gate and source/drain electrodes and displaying high transistor performance.…”

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confidence: 99%