ZnO and Al-doped ZnO thin films prepared by spray pyrolysis for ethanol gas sensing

Bakha, Y.; Bendimerad, K.M.; Hamzaoui, S.

doi:10.1051/epjap/2011110072

Cited by 10 publications

(4 citation statements)

References 15 publications

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“…Zinc oxide (ZnO) is one of the most multifunctional semiconductor material used in different applications' domains like optoelectronic devices [1], light emitting diode (LED) [2], gas sensors [3], and photovoltaic devices [4], owing to its direct wide band gap of 3.37 eV [5], n-type conductivity and high exciton binding energy of 60 meV [6]. On the other hand, it is one of the most potential materials for being used as a TCO (Transparent Conducting Oxides) because of its high electrical conductivity due to lack of oxidation and high transparency in the visible wavelength range.…”

Section: Introductionmentioning

confidence: 99%

Properties of Undoped and (Al, In) Doped ZnO Thin Films Prepared by Ultrasonic Spray Pyrolysis for Solar Cell Applications

Djelloul¹,

Larbah²,

Adnane³

et al. 2018

J. Nano- Electron. Phys.

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Zinc oxide (ZnO) is an n-type semiconductor with a large optical gap (3.4 eV) belonging to the transparent conductive oxides family (TCO). Strongly present as optical window in the chalcopyrite based structures CIGS and CIS. The structural, morphological, optical and electrical properties of ZnO thin films deposited onto glass substrates by ultrasonic spray pyrolysis (USP) technique have been investigated. For comparison and a better understanding of physical properties of undoped and (Al, In) doped ZnO thin films, a number of techniques, including XRD, SEM, optical absorption method (UV) and four-point probe technique were used to characterize the obtained ZnO thin films. Structural analysis shows that all the films were found to be polycrystalline with a wurtzite structure and show a (1 0 1) preferential growth. Besides, we noted that the preferred orientation does not depend on the nature of dopant. The band gaps (Eg) varied from 3.35 to 3.37 eV by Al and In dopants.

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Section: Introductionmentioning

confidence: 99%

Properties of Undoped and (Al, In) Doped ZnO Thin Films Prepared by Ultrasonic Spray Pyrolysis for Solar Cell Applications

Djelloul¹,

Larbah²,

Adnane³

et al. 2018

J. Nano- Electron. Phys.

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“…ZnO is one of the most important wide-band-gap materials (3.3 eV, at 300 K) that has superior electronic and optical properties. [1][2][3][4] As a low cost and non-toxic II-VI semiconductor, its promising applications in thin-film transistors, [5][6][7] dyesensitized solar cells, 8,9 gas sensors, 10,11 varistors 12,13 and transparent conductive oxides or TCOs 14,15 have initiated intensive research. However, doping may be necessary to enhance its performance in view of electronic and optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Relation between synthesis conditions, dopant position and charge carriers in aluminium-doped ZnO nanoparticles

et al. 2013

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“…It exhibits good piezoelectric, photoelectric and optical properties. Hence, it is an ideal candidate to realize optical devices, such as light emitting diodes, transparent conductive films, solar cells [1,2], sensors [3] and surface acoustic wave devices. ZnO thin films and nanostructures have been produced by a wide range of growth techniques, including chemical vapor deposition (CVD) [4], magnetron sputtering [5], laser molecular beam epitaxy [6], sol-gel [7] and spray pyrolysis [8][9][10][11] Among these methods, spray pyrolysis is appropriate for large area thin film formation and easy doping.…”

Section: Introductionmentioning

confidence: 99%

Effect of substrate temperature on structural and optical properties of spray deposited ZnO thin films

Larbah

Adnane

Sahraoui

2015

Materials Science-Poland

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Undoped ZnO thin films have been prepared on glass substrates at different substrate temperatures by spray pyrolysis method. The effect of temperature on the structural, morphological and optical properties of n-type ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the ZnO thin films were polycrystalline with wurtzite structure. Scanning electron microscopy (SEM) measurements showed that the surface morphology of the films changed with temperature. The studies demonstrated that the ZnO film had a transmission of about 85 % and energy gap of 3.28 eV at 450°C. The RBS measurements revealed that ZnO layers with a thickness up to 200 nm had a good stoichiometry.

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ZnO and Al-doped ZnO thin films prepared by spray pyrolysis for ethanol gas sensing

Cited by 10 publications

References 15 publications

Properties of Undoped and (Al, In) Doped ZnO Thin Films Prepared by Ultrasonic Spray Pyrolysis for Solar Cell Applications

Properties of Undoped and (Al, In) Doped ZnO Thin Films Prepared by Ultrasonic Spray Pyrolysis for Solar Cell Applications

Relation between synthesis conditions, dopant position and charge carriers in aluminium-doped ZnO nanoparticles

Effect of substrate temperature on structural and optical properties of spray deposited ZnO thin films

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