We engineered functional cardiac patches by seeding neonatal rat cardiomyocytes onto carbon nanotube (CNT) incorporated photocrosslinkable gelatin methacrylate (GelMA) hydrogel. The resulting cardiac constructs showed excellent mechanical integrity and advanced electrophysiological functions. Specifically, myocardial tissues cultured on 50 μm thick CNT-GelMA showed 3 times higher spontaneous synchronous beating rates and 85% lower excitation threshold, compared to those cultured on pristine GelMA hydrogels. Our results indicate that the electrically conductive and nanofibrous networks formed by CNTs within a porous gelatin framework is the key characteristics of CNT-GelMA leading to improved cardiac cell adhesion, organization, and cell-cell coupling. Centimeter-scale patches were released from glass substrates to form 3D biohybrid actuators, which showed controllable linear cyclic contraction/extension, pumping, and swimming actuations. In addition, we demonstrate for the first time that cardiac tissues cultured on CNT-GelMA resist damage by a model cardiac inhibitor as well as a cytotoxic compound. Therefore, incorporation of CNTs into gelatin, and potentially other biomaterials, could be useful in creating multifunctional cardiac scaffolds for both therapeutic purposes and in vitro studies. These hybrid materials could also be used for neuron and other muscle cells to create tissue constructs with improved organization, electroactivity, and mechanical integrity.
Abstract-Conventional GaN vertical devices, though promising for high-power applications, need expensive GaN substrates. Recently, low-cost GaN-on-Si vertical diodes have been demonstrated for the first time. This paper presents a systematic study to understand and control the OFF-state leakage current in the GaN-on-Si vertical diodes. Various leakage sources were investigated and separated, including leakage through the bulk drift region, passivation layer, etch sidewall, and transition layers. To suppress the leakage along the etch sidewall, an advanced edge termination technology has been developed by combining plasma treatment, tetramethylammonium hydroxide wet etching, and ion implantation. With this advanced edge termination technology, an OFF-state leakage current similar to Si, SiC, and GaN lateral devices has been achieved in the GaN-on-Si vertical diodes with over 300 V breakdown voltage and 2.9-MV/cm peak electric field. The origin of the remaining OFF-state leakage current can be explained by a combination of electron tunneling at the p-GaN/drift-layer interface and carrier hopping between dislocation traps. The low leakage current achieved in these devices demonstrates the great potential of the GaN-on-Si vertical device as a new low-cost candidate for high-performance power electronics.Index Terms-Edge termination, GaN-on-Si vertical device, leakage control, leakage origin, power electronics.
This paper studies the effect of substrate-induced strain in the transport properties of AlGaN/GaN heterostructures grown on Si substrates by metal-organic chemical vapor deposition. Partial thinning of the original Si substrate by chemical dry etching has been used to induce controllable amounts of biaxial strain in the sample. After each etching step, Raman and Hall effect—Van Der Pauw measurements were performed as a function of remaining Si substrate thickness to study the residual biaxial strain and transport properties of the two-dimensional electron gas (2DEG). A 25% increase in the 2DEG density was obtained after removal of ∼30% of the total Si thickness. In addition, a 20% higher electron mobility has been observed under biaxial strain increase. This new technology has been applied to standard AlGaN/GaN transistors grown on Si substrates to increase their maximum current density by ∼20%.
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