Thickness dependence of structural, electrical and optical behaviour of undoped ZnO thin films

Bouderbala, M.; Hamzaoui, S.; Amrani, B.; Reshak, A.H.; Adnane, M.; Sahraoui, T.; Zerdali, M.

doi:10.1016/j.physb.2008.04.045

Cited by 126 publications

(62 citation statements)

References 20 publications

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“…(1). One may extend the linear part of α 2 as a straight asymptotic line that intercepts the horizontal axis α 2 = 0) yielding E g from hν value [30,31]. It has been observed that the average transmittance of samples in the visible range rises from 80% to 92% as the temperature increases.…”

Section: Optical Propertiesmentioning

confidence: 99%

Optical and Electrical Characterization of (002)-Preferentially Oriented n-ZnO/p-Si Heterostructure

Abdallah

Al-Khawaja

2015

Acta Phys. Pol. A

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In this paper, preferentially oriented (002) ZnO thin lms have been grown on Si (100) and glass substrates using radio frequency magnetron sputtering. The dependence of the quality of the ZnO thin lms at dierent substrate temperatures on the growth is studied. A ZnO thin lm with c-axis-oriented würtzite structure is obtained at a growth temperature from 200 to 400• C. X-ray diraction shows that the full width at half maximum θ2θ of (002) ZnO/Si is located at approximately 34.42• , which is used to infer the grain size that is found to be 17 nm to 19.7 nm. The FWHM is 9.5• to 8• in rocking curve mode, from which the crystalline quality has been determined. The texture degree demonstrates the improvement in quality with the increase of substrate temperature, which is best at 400• C. The band gap extracted by UV transmittance spectrum has been identied as 3.2 eV at 400• C. The electrical characteristics via CV and IV measurements on the basis of the heterojunction thermal emission model conrm the domination of high-density grain boundary layer existing at the interface. The transport currents indicate to the presence of space-charge-limited current and trap-charge-limited current mechanisms.

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Section: Optical Propertiesmentioning

confidence: 99%

Optical and Electrical Characterization of (002)-Preferentially Oriented n-ZnO/p-Si Heterostructure

Abdallah

Al-Khawaja

2015

Acta Phys. Pol. A

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“…ZnO have become a promising TCO materials due to its nontoxic, inexpensive and abundant material compared to ITO that once was a commonly used materials [3][4][5][6]. Besides that, ZnO have a wide direct band gap of 3.3 eV, high electrical conductivity, high optical transmission and high excitation binding energy of 60 meV, which makes the CuGaO2/ZnO heterojunction a demanding candidate in optoelectronic applications [7,8].…”

Section: Introductionmentioning

confidence: 99%

Annealing dependence on flexible p-CuGaO₂/n-ZnO heterojunction diode deposited by RF sputtering method

et al. 2017

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Abstract. In this work, p-CuGaO2/n-ZnO heterojunction diodes were deposited by RF powered sputtering method on polyethylene terephthalate (PETP, PET) substrates. Structural, morphology, optical and electrical properties of CuGaO2/ZnO heterojunction was investigated as a function of annealing duration. The structural properties show the ZnO films (002) peak were stronger at the range of 34˚ while CuGaO2 (015) peak is not visible at 44˚С. The surface morphology revealed that RMS roughness become smoother as the annealing duration increase to 30 minutes and become rougher as the annealing duration is increased to 60 minutes. The optical properties of CuGaO2/ZnO heterojunction diode at 30 minutes exhibit approximately 75% optical transmittance in the invisible region. The diodes exhibited a rectifying characteristic and the maximum forward current was observed for the diode annealed for 30 minutes. The diodes show an ideality factor range from 43.69 to 71.29 and turn on voltage between 0.75 V and 1.05 V.

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“…The interest on these materials has been renewed because of their potential for obtaining transparent conductors, magnetic semiconductors, and improved gas sensing elements 1 . For this purpose, much research is being focused on the control of the ZnO electrical response, in particular by doping with different ions.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Electrical Characterization of Zinc Stannate (Zto) Prepared by Hydrothermal Method

Ruíz-León

Ávila

Venegas

2015

J. Chil. Chem. Soc.

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Zinc Stannate was prepared at 200 °C by hydrothermal method. The X-Ray diffraction data indicate the obtained compound crystallized in the Fd3m space group characteristic of a cubic spinel structure. SEM-EDX and backscattered electrons show and confirm the purity and homogeneity of the final sample. The ZTO pressed pellet, sintered at 825 ºC, for 1 h, reveals a single, slightly flattened, impedance semicircle and homogeneous electrical microstructure.

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Thickness dependence of structural, electrical and optical behaviour of undoped ZnO thin films

Cited by 126 publications

References 20 publications

Optical and Electrical Characterization of (002)-Preferentially Oriented n-ZnO/p-Si Heterostructure

Optical and Electrical Characterization of (002)-Preferentially Oriented n-ZnO/p-Si Heterostructure

Annealing dependence on flexible p-CuGaO₂/n-ZnO heterojunction diode deposited by RF sputtering method

Synthesis and Electrical Characterization of Zinc Stannate (Zto) Prepared by Hydrothermal Method

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Thickness dependence of structural, electrical and optical behaviour of undoped ZnO thin films

Cited by 126 publications

References 20 publications

Optical and Electrical Characterization of (002)-Preferentially Oriented n-ZnO/p-Si Heterostructure

Optical and Electrical Characterization of (002)-Preferentially Oriented n-ZnO/p-Si Heterostructure

Annealing dependence on flexible p-CuGaO2/n-ZnO heterojunction diode deposited by RF sputtering method

Synthesis and Electrical Characterization of Zinc Stannate (Zto) Prepared by Hydrothermal Method

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Annealing dependence on flexible p-CuGaO₂/n-ZnO heterojunction diode deposited by RF sputtering method