2022
DOI: 10.1039/d1cp05456b
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XMCD and ab initio study of interface-engineered ultrathin Ru/Co/W/Ru films with perpendicular magnetic anisotropy and strong Dzyaloshinskii–Moriya interaction

Abstract: Understanding the nature of recently discovered spin-orbital induced phenomena and a definition of a general approach for “ferromagnet/heavy-metal” layered systems to enhance and manipulate spin-orbit coupling, spin-orbit torque, and the...

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Cited by 4 publications
(2 citation statements)
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References 49 publications
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“…In this paper, we address the thermal annealing effect on PMA and i-DMI of Ru/Co/W/Ru films, whose magnetic properties have recently been studied. The Ru/Co/W/Ru films are a recent counterpart of the widely used Pt/Co-based systems, because they possess large PMA and i-DMI ( D eff = −3.1 erg/cm 2 in as-deposited Ru/Co(1)/W(0.23)/Ru, where the thickness is nanometers) and can be used to realize skyrmion-based devices . Moreover, the modified Ru/Co/Ru/W films are interesting for SOT-induced magnetization switching .…”
Section: Introductionmentioning
confidence: 99%
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“…In this paper, we address the thermal annealing effect on PMA and i-DMI of Ru/Co/W/Ru films, whose magnetic properties have recently been studied. The Ru/Co/W/Ru films are a recent counterpart of the widely used Pt/Co-based systems, because they possess large PMA and i-DMI ( D eff = −3.1 erg/cm 2 in as-deposited Ru/Co(1)/W(0.23)/Ru, where the thickness is nanometers) and can be used to realize skyrmion-based devices . Moreover, the modified Ru/Co/Ru/W films are interesting for SOT-induced magnetization switching .…”
Section: Introductionmentioning
confidence: 99%
“…19−21 The Ru/Co/W/Ru films are a recent counterpart of the widely used Pt/Co-based systems, because they possess large PMA and i-DMI (D eff = −3.1 erg/cm 2 in as-deposited Ru/Co(1)/W(0.23)/Ru, where the thickness is nanometers) and can be used to realize skyrmion-based devices. 21 Moreover, the modified Ru/Co/ Ru/W films are interesting for SOT-induced magnetization switching. 22 We demonstrate the significant increase in i-DMI after annealing of all samples at T ann ranging from 200 to 240 °C and the sequential decrease after the thermal treatment at T ann = 250 °C.…”
Section: ■ Introductionmentioning
confidence: 99%