Magnetoresistive (MR) sensors have been identified as promising candidates for the development of high-performance magnetometers due to their high sensitivity, low cost, low power consumption, and small size. The rapid advance of MR sensor technology has opened up a variety of MR sensor applications. These applications are in different areas that require MR sensors with different properties. Future MR sensor development in each of these areas requires an overview and a strategic guide. A MR sensor roadmap (non-recording applications) was therefore developed and made public by the Technical Committee of The IEEE Magnetics Society with the aim to provide an R&D guide for MR sensors intended to be used by industry, government, and academia. The roadmap was developed over a three-year period and coordinated by an international effort of 22 taskforce members from 10 countries and 17 organizations, including universities, research institutes, and sensor companies. In this paper, the current status of MR sensors for non-recording

The lateral motion of a magnetic skyrmion, arising because of the skyrmion Hall effect, imposes a number of restrictions on the use of this spin state in the racetrack memory. A skyrmionium is a more promising spin texture for memory applications, since it has zero total topological charge and propagates strictly along a nanotrack. Here, the stability of the skyrmionium, as well as the dependence of its size on the magnetic parameters, such as the Dzyaloshinskii–Moriya interaction and perpendicular magnetic anisotropy, are studied by means of micromagnetic simulations. We propose an advanced method for the skyrmionium nucleation due to a local enhancement of the spin Hall effect. The stability of the skyrmionium being in motion under the action of the spin polarized current is analyzed.

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The diode effect is fundamental to electronic devices and is widely used in rectifiers and AC-DC converters. At low temperatures, however, conventional semiconductor diodes possess a high resistivity, which yields energy loss and heating during operation. The superconducting diode effect (SDE) 1-8 , which relies on broken inversion symmetry in a superconductor may mitigate this obstacle: in one direction a zero-resistance supercurrent can flow through the diode, but for the opposite direction of current flow, the device enters the normal state with ohmic resistance. The application of a magnetic field can induce SDE inNb/V/Ta superlattices with a polar structure 1,2 , in superconducting devices with asymmetric patterning of pinning centres 9 , or in superconductor/ferromagnet hybrid devices with induced vortices 10,11 . The need for an external magnetic field limits their practical application. Recently, a field-free SDE was observed in a NbSe2/Nb3Br8/NbSe2 junction, and it originates from asymmetric Josephson tunneling that is induced by the Nb3Br8 barrier and the associated NbSe2/Nb3Br8 interfaces 12 . Here, we present another implementation of zero-field SDE using noncentrosymmetric [Nb/V/Co/V/Ta]20 multilayers. The magnetic layers provide the necessary symmetry breaking and we can tune the SDE by adjusting the structural parameters, such as the constituent elements, film thickness, stacking order, and number of repetitions. We control the polarity of the SDE through the magnetization direction of the ferromagnetic layers. Artificially stacked structures 13-18 , as the one used in this work, are of particular interest as they are compatible with microfabrication techniques and can be integrated with devices such as Josephson junctions 19-22 . Energy-loss-free SDEs as presented in this work may therefore enable novel non-volatile memories and logic circuits with ultralow power consumption.

An enhancement of the spin-orbit effects arising on an interface between a ferromagnet (FM) and a heavy metal (HM) is possible through the strong breaking of the structural inversion symmetry in the layered films. Here, we show that an introduction of an ultrathin W interlayer between Co and Ru in Ru/Co/Ru films enables to preserve perpendicular magnetic anisotropy (PMA) and simultaneously induce a large interfacial Dzyaloshinskii-Moriya interaction (iDMI). The study of the spin-wave propagation in the Damon-Eshbach geometry by Brillouin light scattering spectroscopy reveals the drastic increase in the iDMI value with the increase in W thickness (tW). The maximum iDMI of −3.1 erg/cm2 is observed for tW = 0.24 nm, which is 10 times larger than for the quasi-symmetrical Ru/Co/Ru films. We demonstrate the evidence of the spontaneous field-driven nucleation of isolated skyrmions supported by micromagnetic simulations. Magnetic force microscopy measurements reveal the existence of sub-100-nm skyrmions in the zero magnetic field. The ability to simultaneously control the strength of PMA and iDMI in quasi-symmetrical HM/FM/HM trilayer systems through the interface engineered inversion asymmetry at the nanoscale excites new fundamental and practical interest in ultrathin ferromagnets, which are a potential host for stable magnetic skyrmions.

To stabilize nontrivial spin textures, e.g., skyrmions or chiral domain walls in ultrathin magnetic films, an additional degree of freedom, such as the interfacial Dzyaloshinskii-Moriya interaction (IDMI), must be induced by the strong spin-orbit coupling (SOC) of a stacked heavy metal layer. However, advanced approaches to simultaneously control the IDMI and perpendicular magnetic anisotropy (PMA) are needed for future spin-orbitronic device implementations. Here, we show the effect of atomic-scale surface modulation on the magnetic properties and IDMI in ultrathin films composed of 5d heavy metal/ferromagnet/4d(5d) heavy metal or oxide interfaces, such as Pt/CoFeSiB/Ru, Pt/CoFeSiB/ Ta, and Pt/CoFeSiB/MgO. The maximum IDMI value corresponds to the correlated roughness of the bottom and top interfaces of the ferromagnetic layer. The proposed approach for significant enhancement of PMA and the IDMI through interface roughness engineering at the atomic scale offers a powerful tool for the development of spinorbitronic devices with precise and reliable controllability of their functionality.

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