Growth of high-quality ruthenium films on sapphire
Lena N. Majer,
Sander Smink,
Wolfgang Braun
et al.
Abstract:We have developed and optimized a method to grow ruthenium films of unprecedented quality. Our three-step process is reminiscent of solid-phase epitaxy. First, c-cut sapphire substrates are terminated at their Al-rich √31 × √31R ± 9° reconstruction by in situ annealing. Second, 3D structured epitaxial Ru films are deposited at low temperatures by laser evaporation of Ru rods. Third, the films, thus, obtained are epitaxially transformed by high-temperature annealing. X-ray diffraction studies reveal good crysta… Show more
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