XFCB: a high speed complementary bipolar process on bonded SOI

Feindt, S.; Hajjar, Jean-Jacques; Lapham, J.; Buss, D.D.

doi:10.1109/bipol.1992.274036

Cited by 35 publications

(4 citation statements)

References 5 publications

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“…Bipolar, CB (complementary-bipolar), LC 2 MOS (linear compatible CMOS), BiCMOS (bipolar-CMOS) and pure CMOS processes [75][76][77] are found among the selection (cf. column 'Tech.'…”

Section: Technologiesmentioning

confidence: 99%

A Survey of Analog-to-Digital Converters for Operation under Radiation Environments

Pun-García

López‐Vallejo

2020

Electronics

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In this work, we analyze in depth multiple characteristic data of a representative population of radenv-ADCs (analog-to-digital converters able to operate under radiation). Selected ADCs behave without latch-up below 50 MeV·cm2/mg and are able to bear doses of ionizing radiation above 50 krad(Si). An exhaustive search of ADCs with radiation characterization data has been carried out throughout the literature. The obtained collection is analyzed and compared against the state of the art of scientific ADCs, which reached years ago the electrical performance that radenv-ADCs provide nowadays. In fact, for a given Nyquist sampling rate, radenv-ADCs require significantly more power to achieve lower effective resolution. The extracted performance patterns and conclusions from our study aim to serve as reference for new developments towards more efficient implementations. As tools for this purpose, we have conceived FOMTID and FOMSET, two new figures of merit to compare radenv-ADCs that consider electrical and radiation performance.

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“…Bipolar, CB (complementary-bipolar), LC 2 MOS (linear compatible CMOS), BiCMOS (bipolar-CMOS) and pure CMOS processes [75][76][77] are found among the selection (cf. column 'Tech.'…”

Section: Technologiesmentioning

confidence: 99%

A Survey of Analog-to-Digital Converters for Operation under Radiation Environments

Pun-García

López‐Vallejo

2020

Electronics

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“…This discussion will focus on the medium breakdown NPN. Like its predecessors [1]- [4], the process is SOI based which provides lower and more linear capacitances, reduced cross-talk and high temperature leakage, latchup immunity and elimination of substrate transistors. This is at the expense of increased self heating; therefore, the designer faces an additional hurdle selecting the optimum transistor layout style.…”

Section: Measured Resultsmentioning

confidence: 98%

TCAD assisted reflection on parameter extraction for compact modeling

Steigerwald

Humphries

2010

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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Base resistance extraction for small geometry, self aligned bipolar transistors has become more problematic as the other resistances and capacitances effecting the input impedance have become more significant and distributed.Following an introduction to Analog Devices' XFCB3 process, this paper will review a combination of measured results, TCAD simulations and Spice analysis of hybrid-π equivalent circuits which were used to better understand the base resistance extraction issues.

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“…Complementary bipolar processes fabricated using SOI substrates have been reported elsewhere e.g. [1]. Our high voltage complementary bipolar technology is fully isolated and includes a full suite of passive components.…”

Section: Introductionmentioning

confidence: 99%

A 12Volt, 12GHz Complementary Bipolar Technology for High Frequency Analogue Applications

Wilson¹,

Harrington²,

Manson³

et al. 2002

32nd European Solid-State Device Research Conference

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In this paper we report a new 12volt, high performance, highly competitive silicon complementary bipolar technology. NPN and vPNP devices have been fabricated with cut-off frequencies greater than 12GHz and breakdowns not less than 12volts. Two optimization techniques are discussed that can be used to improve the cut-off frequency of the vPNP device independently of the NPN. The resulting process is considered ideally suited to the manufacture of highly linear 1GHz operational amplifiers.

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XFCB: a high speed complementary bipolar process on bonded SOI

Cited by 35 publications

References 5 publications

A Survey of Analog-to-Digital Converters for Operation under Radiation Environments

A Survey of Analog-to-Digital Converters for Operation under Radiation Environments

TCAD assisted reflection on parameter extraction for compact modeling

A 12Volt, 12GHz Complementary Bipolar Technology for High Frequency Analogue Applications

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