X-ray topography and diffraction studies of misfit dislocation nucleation in Si-based structures

Abstract

The combination of different X-ray topography techniques and reciprocal space mapping is used to monitor the early stages of relaxation in silicon-based heterostructures. For lightly doped silicon layers grown on heavily boron-doped 150 mm substrates, Lang transmission topography demonstrates that an orthogonal array of 60 • misfits nucleates only at the wafer periphery. The length of the individual misfit segment depends on the epitaxial layer thickness and on the presence of the orthogonal blocking misfit segments. Double-crystal X-ray topography, with better strain and tilt resolution, allows one to distinguish between the different tilt components of parallel misfit dislocations. Relaxation is quantified using triple-axis X-ray diffraction. Reciprocal space maps around both the ( 004) and ( 224) reflections show that the misfits relieve about 38% of the strain. The combination of these X-ray techniques offers insight into the means to reduce dislocation formation and into the fundamental nature of the dislocations themselves.

Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates

“…Of course, the defects themselves may not be so large, but the distortions they create extend over length scales (tens of microns), far larger than the defects themselves. Similar concepts have been demonstrated in earlier studies on the misfit dislocations in Si using XRT . Note the presence of some orthogonal lines and circular features in Figure c, which are due to metallization on the sample surface.…”

Optimization of SiGe Graded Buffer Defectivity and Throughput by Means of High Growth Temperature and Pre-Threaded Substrates

“…[10] It is shown in Figure 2 that edge heterogeneous sources are the first to activate. This is consistent with previous experiments in SiGe/Si [14] and p/p + Si, [15] where a paucity of both substrate threading dislocations and interior heterogeneous sources existed.…”

Методы Рентгеновской Дифракционной Топографии (О Б З О Р)

“…Метод Ланга особенно эффективен при изучении структурных дефектов в слабопоглощающих РЛ кристаллах. Он получил широкое распространение при характеризации реальной структуры монокристаллических пластин кремния, используемых в электронной промышленности для производства полупроводниковых микросхем (например, [41,[50][51][52] [56,57].…”