Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates

Abstract

The evolution of defects due to high‐pressure annealing of magnesium ion‐implanted epitaxial GaN grown on high‐quality GaN substrates is investigated. Changes in the implant‐induced strain are quantified as a function of annealing temperature and time. After annealing at 1300 °C for 10 min, the implant‐induced strain is fully relieved and accompanied by the presence of extended defects such as basal plane stacking faults and prismatic loops. Approximately one‐third of the original implant‐induced strain remains after annealing at 700 °C, and 5% of the original strain remains at 1000 °C for 100 min. In all cases, nearly all of the recovered strain occurs within first few minutes of annealing. A prominent increase in the asymmetric (10true1¯4) triple axis X‐ray rocking curve full width at 0.01 maximum (FW0.01M) is observed after annealing at 1300 °C for 10 min. After annealing at 1300 °C for 100 min, a subsequent decrease in FW0.01M is correlated with a reduction of the extended defect density from 4 × 108 to 3 × 107 cm−2, determined through transmission electron microscope (TEM) measurements. Further reduction in the density of the extended defects by optimizing annealing temperature and time is expected to improve the performance of GaN‐based vertical power devices.

Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3–SiC Interfaces

“…However, the broader shoulders observed below the half maximum intensity of the sample annealed at 800 °C show that other extended defects may evolve during the annealing. This behavior has been observed in implanted and annealed GaN …”

“…This behavior has been observed in implanted and annealed GaN. 32 Figure 6c shows the comparison of calculated and measured thermal conductivity. The four samples studied in this work were heated to 450 °C during the exfoliation transfer process.…”

Effects of Hydrogen Incorporation on Mg Diffusion in GaN‐Doped with Mg Ions via Ultra‐High‐Pressure Annealing

“…[10,11] UHPA permits the use of high temperatures and long annealing durations without surface degradation. Using this technique, the implantation-induced strain is effectively removed, [12] and high acceptor activation percentages greater than 80% respective to implanted magnesium (Mg) ions have been obtained. [10,13,14] Unfortunately, prolonged annealing at high temperatures can promote the diffusion of Mg atoms so that the dopant dispersion profile is changed.…”

Experimental evidence of auxeticity in ion implanted single crystal calcite

“…Early work by Servidori 8 for ion implanted silicon substrates showed that this distortion can be studied with X-ray diffraction (XRD) and a strain profile caused by the ion implantation can be extracted. Previous works have examined a wide roster of materials including Si 9 , III–V 10 , 11 , and II–VI 12 materials and employ both XRD measurements and Monte Carlo simulations to obtain strain and displacements-per-atom profiles of implanted materials. Out-of-plane lattice expansion due to the implantation is universally observed for previously studied materials.…”