Effective management of the insulating ligands is prerequisite for achieving good electrical coupling between colloidal quantum dots (CQDs) and, thus, highperformance solar cells. Here, we developed a rationally designed post-synthetic process for effective control of ligand density on organic-inorganic hybrid formamidinium lead triiodide (FAPbI 3) perovskite CQDs. The resulting FAPbI 3 CQD solar cells demonstrated power-conversion efficiency of 8.38% with stability superior to that of bulk FAPbI 3 devices.

Postfabrication surface treatment strategies have been instrumental to the stability and performance improvements of halide perovskite photovoltaics in recent years. However, a consensus understanding of the complex reconstruction processes occurring at the surface is still lacking. Here, we combined complementary surface-sensitive and depth-resolved techniques to investigate the mechanistic reconstruction of the perovskite surface at the microscale level. We observed a reconstruction toward a more PbI 2 -rich top surface induced by the commonly used solvent isopropyl alcohol (IPA). We discuss several implications of this reconstruction on the surface thermodynamics and energetics. Particularly, our observations suggest that IPA assists in the adsorption process of organic ammonium salts to the surface to enhance their defect passivation effects.

AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to improve device performance. However, the intrinsic high thermal conductivity of bulk AlN predicted by theoretical calculations has not been experimentally observed because of the difficulty in producing materials with low vacancy and impurity levels, and other associated defect complexes in AlN which can decrease the thermal conductivity. This work reports the growth of thick (>15 m) AlN layers by metal-organic chemical vapor deposition with an air-pocketed AlN layer and the first experimental observation of intrinsic thermal conductivity from 130 K to 480 K that matches density-function-theory calculations for single crystal AlN, producing some of the highest values ever measured. Detailed material characterizations confirm the high quality of these AlN samples with one or two orders of magnitude lower impurity concentrations than seen in commercially available bulk AlN. Measurements of these commercially available bulk AlN substrates from 80 K to 480 K demonstrated a lower thermal conductivity, as expected. A theoretical thermal model is built to interpret the measured temperature dependent thermal conductivity. Our work demonstrates that it is possible to obtain theoretically high values of thermal conductivity in AlN and such films may impact the thermal management and reliability of future electronic and optoelectronics devices.

Conventional epitaxy of semiconductor films requires a compatible single crystalline substrate and precisely controlled growth conditions, which limit the price competitiveness and versatility of the process. We demonstrate substrate-tolerant nano-heteroepitaxy (NHE) of high-quality formamidinium-lead-tri-iodide (FAPbI3) perovskite films. The layered perovskite templates the solid-state phase conversion of FAPbI3 from its hexagonal non-perovskite phase to the cubic perovskite polymorph, where the growth kinetics are controlled by a synergistic effect between strain and entropy. The slow heteroepitaxial crystal growth enlarged the perovskite crystals by 10-fold with a reduced defect density and strong preferred orientation. This NHE is readily applicable to various substrates used for devices. The proof-of-concept solar cell and light-emitting diode devices based on the NHE-FAPbI3 showed efficiencies and stabilities superior to those of devices fabricated without NHE.