Articles you may be interested inGaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics Appl. Phys. Lett. 105, 043105 (2014); 10.1063/1.4891557Growth of InGaAsP based asymmetric quantum well infrared photodetector using metalorganic vapor phase epitaxy

SiGe-free strained Si on insulator substrates were fabricated by wafer bonding and hydrogen-induced layer transfer of strained Si grown on bulk relaxed Si0.68Ge0.32 graded layers. Raman spectroscopy shows that the 49-nm thick strained Si on insulator structure maintains a 1.15% tensile strain even after SiGe layer removal. The strain in the structure is thermally stable during 1000 °C anneals for at least 3 min, while more extreme thermal treatments at 1100 °C cause slight film relaxation. The fabrication of epitaxially defined, thin strained Si layers directly on a buried insulator forms an ideal platform for future generations of Si-based microelectronics.

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Photoluminescence has been measured for double- and separate-confinement InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic vapor deposition. A measurement of the integrated luminescence intensity at the temperature range of 77–300 K shows that over a wide range of excitation level (1–5×102 W/cm2) the radiative transitions are the dominant mechanism below T∼170 K. Auger recombination coefficient C=C0 exp(−Ea/kT) with C0≊5×10−27 cm6/s and Ea≊40 meV has been estimated.

The optimized structure for the InGaAsP/GaAs quaternary material lasers (λ=0.808 μm) is investigated for the most efficient high-power operation through an experiment and theoretical study. A comparative study is performed of threshold current density Jth and differential efficiency ηd dependence on cavity length (L) for two different laser structures with different active layer thickness (150 and 300 Å) as well as for laser structures with different multiple quantum well structures. A theoretical model with a more accurate formulation for minority leakage phenomenon provides explanation for the experimental results and sets general optimization rules for other lasers with similar restrictions on the band gap and refractive index difference between the active layer and the cladding layers.

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