Writing the identity in radio frequency identity tags with focused ion-beam implantation of transistor gates

Marco, Anthony De; Bandy, W.R.; Parsa, S.; Kaufmann, Henry; Melngailis, J.

doi:10.1116/1.2091092

Cited by 3 publications

(2 citation statements)

References 4 publications

(1 reference statement)

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“…The use of XeF 2 gas has been successful for different materials such as diamond [19], Si, SiO 2 , and W [17], because the generated fluorides of this materials are volatile. The possibility of gas assisted etching of titanium (Ti) using an e-beam and XeF 2 was also shown by DeMarco et al [20]. Since Ti is a biocompatible material it is used in many biotechnological applications.…”

Section: Introductionmentioning

confidence: 92%

Interdigitated 50 nm Ti electrode arrays fabricated using XeF₂enhanced focused ion beam etching

et al. 2006

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The fabrication of interdigitated titanium nanoelectrode arrays of 50 nm in width and spacing is described in this work. The nanoarrays have been realized using a Ga + focused ion beam (FIB). FIB milling is typically accompanied by redeposition of removed material, which represents an important hindrance for milling closely spaced nanostructures. Redeposition effects have been reduced by means of XeF 2 gas assistance, which increases the etch yield by a factor of seven compared with pure ion milling. Furthermore, we used a simple adsorption model, which led to the conclusion that dwell time and refresh time should be <500 ns and >30 ms, respectively, for optimized XeF 2 assisted Ti milling. The measured resistance R of the electrodes is higher than 1 G .

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Section: Introductionmentioning

confidence: 92%

Interdigitated 50 nm Ti electrode arrays fabricated using XeF₂enhanced focused ion beam etching

et al. 2006

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“…Together with tungsten based device metallization this process enables repeated cycles of ion implantation and rapid thermal annealing, as well as "retrofitting" of functional transistors with specific channel implants [22]. Sensitivity to single ion impacts is demonstrated without device cooling and for relatively large devices and allows extension to doping and transport studies of sub-micron devices in future work.…”

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confidence: 99%

Detection of low energy single ion impacts in micron scale transistors at room temperature

Batra

Weis

Reijonen

et al. 2007

Applied Physics Letters

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[7]. Donor electron and nuclear spins are promising candidates for implementation of quantum bits in silicon [7]. The detection of low energy single ion impacts for device integration has been accomplished via detection of secondary electrons [2,4,9], or by collection of electron holepairs in optimized diodes [3]. It is also well known that high energy (MeV) single ion impacts can upset device currents [10], and an extension of this approach to low energy ions was recently outlined in Ref. 11. Also, random telegraph noise due to switching occupancies of single Coulomb scattering centers [12] has long been observed in sub-micron transistors, and it can thus be expected that the impact of lower energy (<100 keV) single ions, which is accompanied by the generation of multiple charged defects, can also be sensed in FETs.In this letter we report on the detection of low energy (50 to 70 keV) antimony and xenon ion impacts in FETs with channel areas of 4 μm 2 at room temperature. FETs were formed for development of single donor spin readout techniques, and spin dependent neutral donor scattering was recently observed in transport studies with similar devices used here [13]. Single ions change transistor channel mobilities through formation of defects upon impact, enabling precision placement of defined numbers of dopants into transistor channels. Upon further reduction of the beam current to ~0.1 ions/s, pulses contain mostly no ions, and current steps from single ion hits are recorded (Figure 2 c)). The probability for multiple ion hits in one pulse under these conditions of reduced beam current was less then 3%.During exposures with ions of different impact energies and charge states we found that the sensitivity to ion impacts, i. e. the magnitude of current steps, was gradually reduced with increasing implant dose. Further, variations in step heights at the given noise level did not allow us to confidently discriminate multiple hits from single ion hits based on the step heights. Due to the degrading sensitivity, it was also difficult to investigate charge state effects on the single ion induced current step height. It can be expected that the localized deposition of potential energy of multiply and highly charged ions [21] contributes significantly to the formation of defects in the gate oxide and at the Si-SiO 2 interface, and future work aims at quantifying this effect.Following a series of exposures with an accumulated dose of ~10 11 cm -2 , devices were annealed for damage repair and dopant activation. Rapid thermal annealing (RTA) was performed in an AGA Heatpulse at 900º C for 20 s in Argon, followed by another 30 min. N 2 /H 2 -forming gas anneal at 400º C. In figure 3, we show a series of I-V curves of a pristine A-FET 5 (Fig. 3 a) and NMOS-FET (Fig. 3 b), after FIB processing and forming gas anneal, and then after monitored implantation with noble gas and Sb ions and the consecutive anneals, demonstrating that devices were functional transistors after the full process sequence. The threshold voltages, V...

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CMOS passive rfid transponder with read-only memory for low cost fabrciation

Jeon

Melngailis

Newcomb

2005 Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electr

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Writing the identity in radio frequency identity tags with focused ion-beam implantation of transistor gates

Cited by 3 publications

References 4 publications

Interdigitated 50 nm Ti electrode arrays fabricated using XeF₂enhanced focused ion beam etching

Interdigitated 50 nm Ti electrode arrays fabricated using XeF₂enhanced focused ion beam etching

Detection of low energy single ion impacts in micron scale transistors at room temperature

CMOS passive rfid transponder with read-only memory for low cost fabrciation

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Writing the identity in radio frequency identity tags with focused ion-beam implantation of transistor gates

Cited by 3 publications

References 4 publications

Interdigitated 50 nm Ti electrode arrays fabricated using XeF2enhanced focused ion beam etching

Interdigitated 50 nm Ti electrode arrays fabricated using XeF2enhanced focused ion beam etching

Detection of low energy single ion impacts in micron scale transistors at room temperature

CMOS passive rfid transponder with read-only memory for low cost fabrciation

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Product

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Interdigitated 50 nm Ti electrode arrays fabricated using XeF₂enhanced focused ion beam etching

Interdigitated 50 nm Ti electrode arrays fabricated using XeF₂enhanced focused ion beam etching