WORM and bipolar inkjet printed resistive switching devices based on silver nanocomposites

Abstract

In the present study, silver nanocomposite resistive switching devices were fabricatedbyinkjet printing, specifically designed inks onto planar symmetrical electrodes. The printed devices show different memory/switching behaviours according to theprinted patternand number of ejected drops (in turn according to the total ejected ink volume). A drop-on-position print results in a random access type memory with a rectifying ratio of 10 3 . The effect of compliance upon switching was studied. It was observed that an increase in the compliance current changed the switching behaviour of the device to bipolar and non-volatile with an On/Off ratio of 10 4 . A print-on-the-fly method resulted in a write-once-read-manydevice instead, where oncea low resistance state was reached, the device was unable to recover its initial high resistance state. The present study gives an insight into the field-induced formation of conductive silver filaments, resulting in resistance switching. The active switching matrix ink formulation enabledeasy deposition onto various substrates, thus widening printed electronics potential. RECEIVED

Inkjet assisted fabrication of planar biocompatible memristors

“…Furthermore, the inkjet bioprinting is rapidly developing nowadays, 54,55 thus enabling precise positioning and arrangement of biological and inorganic elements on the substrate. The nano-and microfabrication methods based on physical (FIB) 56 or chemical (mask lithography) 28,29 treatment provide better reproducibility, 52 though they cannot be considered for conducting in situ experiments with biological cells or tissues. In these cases, the combination of AFM and inkjet patterning shall be a justied choice.…”

“…Recently, several studies addressed the planar conguration of memristive elements. [28][29][30] These elements were technologically performed using photolithography, leaving gaps between the pairs of metallic electrodes and lling them with a memristive composite. The gaps widths were reported to range from 10 mm 28,29 to 50-200 mm.…”

“…[28][29][30] These elements were technologically performed using photolithography, leaving gaps between the pairs of metallic electrodes and lling them with a memristive composite. The gaps widths were reported to range from 10 mm 28,29 to 50-200 mm. 30 To achieve the memristive effect between so far distant electrodes, the authors used dielectric nanocomposite materials with silver nanoparticles.…”

Wearable Intrinsically Soft, Stretchable, Flexible Devices for Memories and Computing

“…Flexible and printed electronics represent the new horizon for mass consumption electron devices industry, taking advantage of cheap substrates such as polymers and papers (both natural and nanoengineered) as well as fast and environmentally friendly additive fabrication technologies, already well settled, as analog (and digital) printing [ 37 ]. A few studies already focused on the development of printable inks enabling resistive switching [ 38 , 39 ]. Memristors or RSDs have also been developed on flexible substrates, using non-toxic, environmentally friendly materials [ 38 ].…”

Improved Resistive Memory Based on ZnO–Graphene Hybrids through Redox Process of Graphene Quantum Dots

“…Compared with conventional vacuum deposition processes, solution‐processed nonvolatile memory devices have unique advantages such as low cost, low‐temperature compatible processing, and facile fabrication . In this work, ultra‐low power consumption and highly uniform switching parameters are achieved in an RRAM device based on solution‐processed zinc oxide–graphene quantum dot (ZnO–GQD) hybrids, and a model explaining the excellent switching properties of the device is proposed.…”