Wideband Modeling of Graphene-Based Structures at Different Temperatures Using Hybrid FDTD Method

Wang, Dawei; Zhao, Wen‐Sheng; Gu, Xiaoqiang; Chen, Wenchao; Wang, Yin

doi:10.1109/tnano.2014.2387576

Cited by 36 publications

(21 citation statements)

References 34 publications

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“…Thus, the linear sheet conductance of graphene (sometimes simply called conductivity) is generally given by the Kubo's formula. Within the randomphase approximation 40,41 , this formula can be reduced to the sum of inter-band and intra-band contributions. The intra-band part is given by:…”

Section: B Linear Simulationmentioning

confidence: 99%

Computational analysis of dispersive and nonlinear 2D materials by using a GS-FDTD method

et al. 2018

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In this paper, we propose a novel numerical method for modeling nanostructures containing dispersive and nonlinear two-dimensional (2D) materials, by incorporating a nonlinear generalized source (GS) into the finite-difference time-domain (FDTD) method. Starting from the expressions of nonlinear currents characterizing nonlinear processes in 2D materials, such as second-and thirdharmonic generation, we prove that the nonlinear response of such nanostructures can be rigorously determined using two linear simulations. In the first simulation, one computes the linear response of the system upon its excitation by a pulsed incoming wave, whereas in the second one the system is excited by a nonlinear generalized source, which is determined by the linear near-field calculated in the first linear simulation. This new method is particularly suitable for the analysis of dispersive and nonlinear 2D materials, such as graphene and transition-metal dichalcogenides, chiefly because, unlike the case of most alternative approaches, it does not require the thickness of the 2D material. In order to investigate the accuracy of the proposed GS-FDTD method and illustrate its versatility, the linear and nonlinear response of graphene gratings have been calculated and compared to results obtained using alternative methods. Importantly, the proposed GS-FDTD can be extended to 3D bulk nonlinearities, rendering it a powerful tool for the design and analysis of more complicated nanodevices.

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Section: B Linear Simulationmentioning

confidence: 99%

Computational analysis of dispersive and nonlinear 2D materials by using a GS-FDTD method

et al. 2018

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“…Because of its outstanding optical and electrical properties, including high optical transmittance, ultrahigh mobility, and low resistivity, graphene has attracted more and more attention on next‐generation technology development. As graphene can be used as transparent and conductive electrodes, both experimental and theoretical studies of graphene‐based nanoelectronic and nanophotonic structures and devices have been carried out . As a semimetal, graphene can be used together with semiconductors such as Si, SiC, GaAs, InP, GaN, carbon nanotube, and organic semiconductors to form a Schottky junction .…”

Section: Introductionmentioning

confidence: 99%

“…As graphene can be used as transparent and conductive electrodes, both experimental and theoretical studies of graphene-based nanoelectronic and nanophotonic structures and devices have been carried out. 1,[7][8][9][10][11][12][13][14][15][16][17][18][19][20] As a semimetal, graphene can be used together with semiconductors such as Si, SiC, GaAs, InP, GaN, carbon nanotube, and organic semiconductors to form a Schottky junction. [19][20][21][22][23][24][25] Comparing with the traditional Schottky junction, the low-density states of graphene lead to that graphene-semiconductor Schottky junction has tunable barrier height and thickness by either chemical doping or electrostatic gating.…”

Section: Introductionmentioning

confidence: 99%

Computational study of graphene‐gated graphene‐Si thin film Schottky junction field‐effect solar cell by finite difference method

Xie

Wang

Yang

et al. 2018

Int J Numerical Modelling

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Modeling and simulation approaches are developed to investigate our proposed graphene‐gated graphene‐Si thin film Schottky junction field‐effect solar cell. Algorithm based on finite difference method is developed to solve the Poisson equation, drift‐diffusion equations, and current continuity equations. Charge transfer effect in the proposed solar cell is not significant due to light doping in the Si thin film. The open‐circuit voltage and short‐circuit current can be tuned by gate bias. As the magnitude of negative bias increases, both the open‐circuit voltage and short‐circuit current increase due to the increase of Schottky barrier height and depletion width. Thin oxide thickness leads to high modulation efficiency. Optimization of the solar cell is achieved by introducing back field layer to increase carrier collection efficiency.

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“…As for more general full-wave numerical simulation, various methods are available, including but not limited to the finite integration technique (FIT) [5], the finite element method (FEM) [6], the method of moments (MOM) [7,8], and the Nyström method [9,10]. For transient electromagnetic analysis, time domain techniques are preferred, e.g., the finite-difference time-domain (FDTD) [11][12][13], discontinuous Galerkin time domain (DGTD) method [14][15][16], and the time-domain integral equation (TDIE) method [17,18].…”

Section: Introductionmentioning

confidence: 99%

“…The TDIE is based on the surface impedance boundary condition. The surface impedance is approximated by a vector fitting (VF) method, which has since its first introduction in 1999 widely applied for its robustness and efficiency [11][12][13][14][15][16][17][18][29][30][31][32][33][34]. Convolution of the temporal surface impedance and current is derived from properties of Laguerre polynomials.…”

Section: Introductionmentioning

confidence: 99%

Marching-on-in-Degree Time-Domain Integral Equation Solver for Transient Electromagnetic Analysis of Graphene

Wang

Liu

Wang³

et al. 2017

Coatings

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Abstract:The marching-on-in-degree (MOD) time-domain integral equation (TDIE) solver for the transient electromagnetic scattering of the graphene is presented in this paper. Graphene's dispersive surface impedance is approximated using rational function expressions of complex conjugate pole-residue pairs with the vector fitting (VF) method. Enforcing the surface impedance boundary condition, TDIE is established and solved in the MOD scheme, where the temporal surface impedance is carefully convoluted with the current. Unconditionally stable transient solution in time domain can be ensured. Wide frequency band information is obtained after the Fourier transform of the time domain solution. Numerical results validate the proposed method.

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Wideband Modeling of Graphene-Based Structures at Different Temperatures Using Hybrid FDTD Method

Cited by 36 publications

References 34 publications

Computational analysis of dispersive and nonlinear 2D materials by using a GS-FDTD method

Computational analysis of dispersive and nonlinear 2D materials by using a GS-FDTD method

Computational study of graphene‐gated graphene‐Si thin film Schottky junction field‐effect solar cell by finite difference method

Marching-on-in-Degree Time-Domain Integral Equation Solver for Transient Electromagnetic Analysis of Graphene

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