Computational study of graphene‐gated graphene‐Si thin film Schottky junction field‐effect solar cell by finite difference method

Abstract

Modeling and simulation approaches are developed to investigate our proposed graphene‐gated graphene‐Si thin film Schottky junction field‐effect solar cell. Algorithm based on finite difference method is developed to solve the Poisson equation, drift‐diffusion equations, and current continuity equations. Charge transfer effect in the proposed solar cell is not significant due to light doping in the Si thin film. The open‐circuit voltage and short‐circuit current can be tuned by gate bias. As the magnitude of negative bias increases, both the open‐circuit voltage and short‐circuit current increase due to the increase of Schottky barrier height and depletion width. Thin oxide thickness leads to high modulation efficiency. Optimization of the solar cell is achieved by introducing back field layer to increase carrier collection efficiency.