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Charge carrier scattering channels in graphite bridging its valence and conduction band offer an efficient Auger recombination dynamic to promote low energy charge carriers to higher energy states. It is of importance to answer the question whether a large number of charge carriers can be promoted to higher energy states to enhance the quantum efficiency of photodetectors. Here, we present an experimental demonstration of an effective Auger recombination process in the photo-excited nano-graphite film. The time-resolved hot carrier thermalization was analyzed based on the energy dissipation via the Auger scattering channels. We split the Auger recombination occurrence centered at 0.40 eV energy state into scattering and recombination parts, for characterizing the scattering rate in the conduction band and the recombination rate toward the valence band. The scattering time with respect to the energy state was extracted as 8 ps · eV−1, while the recombination time with respect to the energy state was extracted as 24 ps · eV−1. Our study indicates a 300 fs delay between the hot carrier recombination and generation, leading to a 105 ps−1 · cm−3 Auger scattering efficiency. The observed duration for the Auger recombination to generate hot carriers is prolonged for 1 ps, due to the hot carriers energy relaxation bottleneck with optical-phonons in the nano-graphite. The presented analytic expression gives valuable insights into the Auger recombination dynamic to estimate its most efficient energy regime for mid-infrared photodetection.

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Ta2O5/TaOx heterostructure has become a leading oxide layer in memory cells and/or a bidirectional selector for resistive random access memory (RRAM). Although atomic layer deposition (ALD) was found to be uniquely suitable for depositing uniform and conformal films on complex topographies, it is hard to use ALD to grow suboxide TaOx layer. In this study, tantalum oxide films with a composition of Ta2O5 were grown by ALD. Using Ar+ ion irradiation, the suboxide was formed in the top layer of Ta2O5 films by observing the Ta core level shift toward lower binding energy with angle-resolved X-ray photoelectron spectroscopy. By controlling the energy and irradiation time of an Ar+ ion beam, Ta2O5/TaOx heterostructure can be reliably produced on ALD films, which provides a way to fabricate the critical switching layers of RRAM.

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Disturbance of neurovascular coupling (NVC) is suggested to be one potential mechanism in type 2 diabetes mellitus (T2DM) associated mild cognitive impairment (MCI). However, NVC evidence derived from functional magnetic resonance imaging ignores the relationship of neuronal activity with vascular injury. Twenty-seven T2DM patients without MCI and thirty healthy controls were prospectively enrolled. Brain regions with changed susceptibility detected by quantitative susceptibility mapping (QSM) were used as seeds for functional connectivity (FC) analysis. NVC coefficients were estimated using combined degree centrality (DC) with susceptibility or cerebral blood flow (CBF). Partial correlations between neuroimaging indicators and cognitive decline were investigated. In T2DM group, higher susceptibility values in right hippocampal gyrus (R.PHG) were found and were negatively correlated with Naming Ability of Montreal Cognitive Assessment. FC increased remarkably between R.PHG and right middle temporal gyrus (R.MTG), right calcarine gyrus (R.CAL). Both NVC coefficients (DC-QSM and DC-CBF) reduced in R.PHG and increased in R.MTG and R.CAL. Both NVC coefficients in R.PHG and R.MTG increased with the improvement of cognitive ability, especially for executive function. These demonstrated that QSM and DC-QSM coefficients can be promising biomarkers for early evaluation of cognitive decline in T2DM patients and help to better understand the mechanism of NVC.