Wide band-gap investigation of modulated BeZnO layers via photocurrent measurement

Yu, Jie‐Zhong; Kim, J. H.; Yang, Huijun; Kim, T. S.; Jeong, T. S.; Youn, C. J.; Hong, Kim Jae

doi:10.1007/s10853-012-6445-8

Cited by 13 publications

(5 citation statements)

References 20 publications

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“…Therefore, it could be problematic to use a common exchange tuning scheme for a quaternary compound containing all four elements. However, bulk band gap of BeO computed with the same Fock exchange ratio of 37.5% is 10.2 eV, which is reasonably close to the experimental value of 10.6 eV [47,48]. The wurtzite structure of MgO is thermodynamically unstable, which makes it difficult to directly estimate the errors in a bandgap of Mg containing oxide alloy.…”

Section: Methodssupporting

confidence: 69%

Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques

Zolnai

Toporkov

Volk

et al. 2015

Applied Surface Science

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HighlightsBeMgZnO thin layers were grown with plasma assisted molecular beam epitaxy (MBE)The Be contents were accurately measured with RBS and proton elastic backscattering The Tauc bandgap was measured from optical transmittance experiments The bandgap has been varied between 3.26 eV and 4.62 eV via the Be and Mg content Experimental and density functional theory calculated bandgaps were in good agreement AbstractThe atomic composition with less than 1-2 atom % uncertainty was measured in ternary BeZnO and quaternary BeMgZnO alloys using a combination of nondestructive Rutherford backscattering spectrometry with 1 MeV He + analyzing ion beam and nonRutherford elastic backscattering experiments with 2.53 MeV energy protons. An enhancement factor of 60 in the cross-section of Be for protons has been achieved to monitor Be atomic concentrations. Usually the quantitative analysis of BeZnO and BeMgZnO systems is challenging due to difficulties with appropriate experimental tools for the detection of the light Be element with satisfactory accuracy. As it is shown, our applied ion beam technique, Page 2 of 22A c c e p t e d M a n u s c r i p t supported with the detailed simulation of ion stopping, backscattering, and detection processes allows of quantitative depth profiling and compositional analysis of wurtzite BeZnO/ZnO/sapphire and BeMgZnO/ZnO/sapphire layer structures with low uncertainty for both Be and Mg. In addition, the excitonic bandgaps of the layers were deduced from optical transmittance measurements. To augment the measured compositions and bandgaps of BeO and MgO co-alloyed ZnO layers, hybrid density functional bandgap calculations were performed with varying the Be and Mg contents. The theoretical vs. experimental bandgaps show linear correlation in the entire bandgap range studied from 3.26 eV to 4.62 eV. The analytical method employed should help facilitate bandgap engineering for potential applications, such as solar blind UV photodetectors and heterostructures for UV emitters and intersubband devices.

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Section: Methodssupporting

confidence: 69%

Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques

Zolnai

Toporkov

Volk

et al. 2015

Applied Surface Science

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“…Obviously, doping of Be results in a linear decrease for lattice constant of a and c, which is due to the fact that the ionic radius of Be 2+ is smaller than that of Zn 2+ . We fitted the lattice constants in Fig.4 shows the calculated band-gaps of Be x Zn 1-x O alloys dependent on Be concentration for further analysis, along with the available experimental values [19] . The bowing parameter were calculated by the following definition,…”

Section: Resultsmentioning

confidence: 99%

A DFT+U Study On The Structural And Electronic Properties Of BeZnO alloys

Xiong¹,

He²,

Wang³

et al. 2018

Proceedings of the 2nd International Forum on Management, Education and Information Technology Application (IFMEITA 2017)

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Abstract. The structural and electronic properties of BeZnO alloys were investigated by DFT+U method, the U o,p = 10.2eV for O 2p and U Zn,d = 1.4eV for Zn 3d were obtained as the Hubbard U values, using this U values the calculated band-gaps of ZnO and BeO are well consistent with the experimental values.The lattice constant a and c, total energies, band-gaps as well as formation enthalpies were calculated for Be x Zn 1-x O alloys with Be concentration varying from 0 to 0.375. The calculated lattice constants comply with the Vegard's law well, and the band-gap bowing parameter is about 5.2eV, the formation enthalpies exhibit a net increase with Be concentration increasing, higher formation enthalpies imply it is more difficult for higher Be doping level.

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“…Owing to a large bandgap (E g > 8 eV (1,2)), wurtzite crystal structure (3,4), and high solid solubility (5), beryllium oxide (BeO) has recently become of significant interest as an alloying agent with wide bandgap semiconductor zinc oxide (ZnO, E g = 3.3 eV) for bandgap engineering and charge carrier confinement in various oxide semiconductor based optoelectronic devices (5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16). BeO also exhibits many other excellent properties (1,(17)(18)(19)(20)(21) including a high dielectric constant (k = 6.7), high breakdown field (E bd > 6 MV/cm), high thermal conductivity (κ > 15 W/mK), and high hardness (H > 30 GPa) that makes it an excellent choice as an insulating gate dielectric (22,23), passivation layer (24,25), diffusion barrier (24), or epitaxial seed layer (27)(28)(29)(30) for both narrow (23,31) and wide bandgap semiconductor devices (32)(33)(34)(35)(36).…”

Section: Introductionmentioning

confidence: 99%

X-Ray Photoemission Investigation of the Beryllium Oxide Band Alignment with Magnesium Oxide and Estimates for Other Insulating and Conducting Oxides

Koh

Hudnall²,

Bielawski

et al. 2021

ECS Trans.

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Beryllium oxide (BeO) is a wurtzite structured, large bandgap (E g > 8 eV) material of significant interest as an alloying agent and cladding dielectric in various oxide based optoelectronic devices. The success of such devices is highly reliant on bandgap and band alignment engineering to achieve sufficient charge carrier and optical confinement for device operation. In this regard, we have utilized x-ray photoemission spectroscopy (XPS) to determine the valence band offset (VBO) between atomic layer deposited (ALD) BeO and a (001) oriented magnesium oxide (MgO) substrate. The BeO VBO with MgO (001) was determined to be 0.1 ± 0.15 eV. Applying the rules of commutativity and transitivity for band alignment, we additionally predict the BeO VBO with other conductive oxides such as ZnO, Ga2O3, and InGaZnO4, to be 1.15 ± 0.3 eV, 0.3 ± 0.2 eV, and 0.9 ± 0.2 eV, respectively.

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Wide band-gap investigation of modulated BeZnO layers via photocurrent measurement

Cited by 13 publications

References 20 publications

Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques

Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques

A DFT+U Study On The Structural And Electronic Properties Of BeZnO alloys

X-Ray Photoemission Investigation of the Beryllium Oxide Band Alignment with Magnesium Oxide and Estimates for Other Insulating and Conducting Oxides

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