Abstract:Beryllium oxide (BeO) is a wurtzite structured, large bandgap (E
g > 8 eV) material of significant interest as an alloying agent and cladding dielectric in various oxide based optoelectronic devices. The success of such devices is highly reliant on bandgap and band alignment engineering to achieve sufficient charge carrier and optical confinement for device operation. In this regard, we have utilized x-ray photoemission spectroscopy (XPS) to determine the valence band offset (VBO) between … Show more
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