Wet Thermal Oxidation of GaAs and GaN

Oxidation rates of aluminium nitride thin films: effect of composition of the atmosphere

“…However, a far better solution consists in obtaining oxides of surface layers as a result of controllable oxidation. The gallium nitride GaN oxidation has been long described in the literature [4,5]. The oxidation of the second nitride, i.e.…”

“…The published papers on the thermal oxidation of semiconductor compounds AIIIN describe largely dry oxidation, while the wet oxidation is described comparatively rarely [4,5]. There also exists a third method of thermal oxidation, namely mixed oxidation that takes place when a mixture of nitrogen, oxygen and water vapour is fed to the Abstract This paper presents an analysis of thermal oxidation kinetics for Aluminium nitride (AlN) epitaxy layers using three methods: dry, wet and mixed.…”

Insulating gallium oxide layer produced by thermal oxidation of gallium‐polar GaN

“…Inspired by the good interface quality of Si with SiO 2 , we examined a simple thermal oxidation process for producing a high-quality insulating layer on GaN. For many compound semiconductors, thermal oxidation is not a viable technique for preparing a dielectric since a mixed oxide is formed with rough surface, such as Ga 2 O 3 +GaAsO 4 +As 2 O 3 where As oxide instability leads to increased defect density at the interface [4,5]. By contrast, a stable, insulating GaO x N y layer can be obtained by the thermal oxidation of GaN [6].…”

Preliminary comparison of three processes of AlN oxidation: dry, wet and mixed ones

“…The thermal oxidation system -open chamber reactor ( Fig. 1) -was described in the literature [7,8]. All pipes and quartz tubular reactor were purged by nitrogen (with purity better than 6N).…”

“…gas sensing. There are potentially many ways and means to make group III oxides [7]. The most popular are vacuum sputtering, plasma oxidation or similar techniques, however, they may damage semiconductor structures of these devices.…”