Oxidation rates of aluminium nitride thin films: effect of composition of the atmosphere

Korbutowicz, R.; Zakrzewski, A.; Rac-Rumijowska, Olga; Stafiniak, Andrzej; Vincze, Á.

doi:10.1007/s10854-017-7243-5

Cited by 10 publications

(12 citation statements)

References 19 publications

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“…In an oxidation diffusion-controlled regime, the oxidation process is controlled by the reagent transport through the growing gallium oxide layer. The oxidation kinetic can thus be described by a parabolic model [57]. Although this regime is note observed for oxidation at 900 • C (green curve), we can assume an under-linear thickening of the shell for higher oxidation times.…”

Section: Ga 2 O 3 -Shell Thickness Evolution and Formationmentioning

confidence: 90%

“…Then, the oxidation process is characterized by two different regimes: The interfacial reaction-controlled and the oxidation diffusion-controlled regimes. In interfacial reaction-controlled regime, the GaN oxidation process is controlled by the surface reaction rate, leading to a linear oxidation [57]. As the oxidation duration is important, as the oxide thickness increases.…”

Section: Ga 2 O 3 -Shell Thickness Evolution and Formationmentioning

confidence: 99%

“…After the formation of the first oxide layer covering the GaN-core NW (Figure 3a,c), the active species must to diffuse through the oxide film in order to form the Ga 2 O 3 . The diffusion rate of O 2− and OH − through the oxide layer being more efficient that the one of metallic ionic species (Ga 2+ ) [54,57,59], the diffusion process is controlled by the oxygen-based active species. Thus, the O 2− and OH − are diffusing through the oxide layer and are combined with the Ga 2+ species diffusing at the metal-oxide interface to form the Ga 2 O 3 -shell (Figure 3b,d).…”

Section: Ga 2 O 3 -Shell Thickness Evolution and Formationmentioning

confidence: 99%

“…The substituted nitrogens (resulting from the GaN decomposition) by oxygen diffuse through the oxide layer towards the oxide/gas interface, being thus able to lead to the formation of interstitial nitrogen [57]. The fact that oxidation rate is higher under wet environment in comparison with dry environment (Figure 2c, green and orange curves), results from the ability of OH − to diffuse more efficiently through the already-grown oxide layer than the O 2− [57]. The difference in diffusion rate is also accentuated by the porosity of the oxide layer form under wet environment, due to the formation of nitrogen and hydrogen during the oxidation reaction [57,60].…”

Section: Ga 2 O 3 -Shell Thickness Evolution and Formationmentioning

confidence: 99%

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GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors

et al. 2019

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The development of sensors working in a large range of temperature is of crucial importance in areas such as monitoring of industrial processes or personal tracking using smart objects. Devices integrating GaN/Ga2O3 core/shell nanowires (NWs) are a promising solution for monitoring carbon monoxide (CO). Because the performances of sensors primarily depend on the material properties composing the active layer of the device, it is essential to control them and achieve material synthesis in the first time. In this work, we investigate the synthesis of GaN/Ga2O3 core-shell NWs with a special focus on the formation of the shell. The GaN NWs grown by plasma-assisted molecular beam epitaxy, are post-treated following thermal oxidation to form a Ga2O3-shell surrounding the GaN-core. We establish that the shell thickness can be modulated from 1 to 14 nm by changing the oxidation conditions and follows classical oxidation process: A first rapid oxide-shell growth, followed by a reduced but continuous oxide growth. We also discuss the impact of the atmosphere on the oxidation growth rate. By combining XRD-STEM and EDX analyses, we demonstrate that the oxide-shell is crystalline, presents the β-Ga2O3 phase, and is synthesized in an epitaxial relationship with the GaN-core.

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Section: Ga 2 O 3 -Shell Thickness Evolution and Formationmentioning

confidence: 90%

Section: Ga 2 O 3 -Shell Thickness Evolution and Formationmentioning

confidence: 99%

Section: Ga 2 O 3 -Shell Thickness Evolution and Formationmentioning

confidence: 99%

Section: Ga 2 O 3 -Shell Thickness Evolution and Formationmentioning

confidence: 99%

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GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors

et al. 2019

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“…18 These results indicate that high TC alone is insufficient to improve heat sinking from 2D material devices, and that it could be important to modify the substrate surface to match the PDOS with the 2D material. For example, we note that among experiments, AlN tends to form a native oxide layer; 46 thus, the presence of heavier O atoms at the surface could increase the lowfrequency PDOS, leading to an experimentally measured TBC that is similar to that with SiO2. 8…”

Section: Tbc Dependence On Substratementioning

confidence: 94%

Thermal boundary conductance of two-dimensional MoS2 interfaces

Suryavanshi

Gabourie

Farimani

et al. 2019

Journal of Applied Physics

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Understanding the thermal properties of two-dimensional (2D) materials and devices is essential for thermal management of 2D applications. Here we perform molecular dynamics simulations to evaluate both the specific heat of MoS2 as well as the thermal boundary conductance (TBC) between one to five layers of MoS2 with amorphous SiO2 and between single-layer MoS2 and crystalline AlN. The results of all calculations are compared to existing experimental data. In general, the TBC of such 2D interfaces is low, below ~20 MWm -2 K -1 , due to the weak van der Waals (vdW) coupling and mismatch of phonon density of states (PDOS) between materials. However, the TBC increases with vdW coupling strength, with temperature, and with the number of MoS2 layers (which introduce additional phonon modes). These findings suggest that the TBC of 2D materials is tunable by modulating their interface interaction, the number of layers, and finding a PDOSmatched substrate, with important implications for future energy-efficient 2D electronics, photonics, and thermoelectrics.

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