Well size related limitations on maximum electroabsorption in GaAs/AlGaAs multiple quantum well structures

Jelley, K.W.; Engelmann, R.W.H.; Alavi, K.; Lee, H.

doi:10.1063/1.101757

Cited by 39 publications

(4 citation statements)

References 6 publications

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“…The first point in the width optimization of a single QW was chosen to be 11 monolayers (ML). Indeed, experimental studies of the absorption spectra for single QWs with width of 17 to 260 Å have already demonstrated that, for very narrow wells, the exciton peaks are strongly broadened due to the phonon scattering, and the well width at which the maximum peak absorption is observed is about 35 Å [23].…”

Section: Design Of Cqwmentioning

confidence: 99%

Enhancement of the refractive index modulation in a modulator based on GaAs/AlGaAs quantum wells

Zolotarev¹,

Shashkin²,

Golovin³

et al. 2019

Semicond. Sci. Technol.

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Approaches of optimization of coupled quantum wells with pronounced quantum-confined Stark effect in order to reach a high refractive index change are described. A numerical simulation was used to determine the optimal design parameters (quantum well width, barrier thickness and composition) based on GaAs/AlGaAs materials with two symmetric quantum wells, which provides the maximum modulation of the refractive index at a small absorption coefficient. It is demonstrated that, with the electric field strength varied within the range 0-20 kV cm −1 at an optical loss for interband absorption not exceeding 10 cm −1 , the refractive index can be changed by up to 0.0362.

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Section: Design Of Cqwmentioning

confidence: 99%

Enhancement of the refractive index modulation in a modulator based on GaAs/AlGaAs quantum wells

Zolotarev¹,

Shashkin²,

Golovin³

et al. 2019

Semicond. Sci. Technol.

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“…This absorption coefficient change is 1.5 times larger than that available from an unstrained MQW structure. 8 Our results can be further improved by increasing QW layers or optimizing the QW structure.…”

Section: Room Temperature Optical Absorption Characteristics Of Gaas/mentioning

confidence: 82%

Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structures under external anisotropic strain

Huang

Garmire

Partovi

et al. 1995

Applied Physics Letters

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We report the room temperature anisotropic absorption characteristics of a GaAs/AlGaAs multiple quantum well structure under biaxial anisotropic strain that was achieved by bonding to an x-cut LiTaO3 substrate at 150 °C, with the [110] and [1■10] directions of the multiple quantum well along the y and z axes of LiTaO3, respectively. A stronger heavy hole excitonic feature can be observed when the polarization of the incident light is in the compression direction, which thus results in larger quantum confined Stark effect. An absorption coefficient change of 0.6 μm−1 was observed for an applied field of 7.4 V/μm. This change in absorption coefficient is 1.5 times the value obtainable from a multiple quantum well without strain.

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“…Using the data of Jelley et al [9] for GaAs/AlGaAs MQW's the absorption change Aa in the intrinsic layers will amount to about 7000cm-' (or even more for smaller well width) instead of 2500cm-' for the Franz-Keldysh absorption. Also the ratio of absorption between high and low field can be increased.…”

Section: Field-induced Nonlinear Absorption In N-i-p-i Structuresmentioning

confidence: 97%

Optical Nonlinearities in n–i–p–i and Hetero‐n–i–p–i Structures

Malzer

Linder

Gulden

et al. 1992

Physica Status Solidi (b)

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Optical nonlinearities in n-i-p-i and hetero-n-i-p-i structures with selective ohmic contacts, are reported. In this kind of structures strong changes of the absorption and refractive index are achieved either by field effects and/or with phase space filling. The latter one is always present in normal n-i-p-i structures but relatively weak because of the 3D character of the DOS. In QW structures this effect is much more pronounced because of the reduced real and momentum space and the enhanced excitonic oscillator strength. First the dynamics of ti-i-p-i structures is discussed and then first experimental results of electrically tuned absorption changes due to band filling are shown. Field effects are also known to give large transmission changes. In particular, results for the transmission modulation in a n-i-p-i structure with a contrast ratio 2 are shown. It is also demonstrated that fast switching can be achieved in n-i-p-i structures. In a device with a 32 pm distance between the n-and p-contacts, a 3 dB frequency of 16 MHz is obtained in excellent agreement with the theoretical prediction. By scaling down the structure to 3 pm frequencies in the GHz range are expected to be feasible.

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Well size related limitations on maximum electroabsorption in GaAs/AlGaAs multiple quantum well structures

Cited by 39 publications

References 6 publications

Enhancement of the refractive index modulation in a modulator based on GaAs/AlGaAs quantum wells

Enhancement of the refractive index modulation in a modulator based on GaAs/AlGaAs quantum wells

Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structures under external anisotropic strain

Optical Nonlinearities in n–i–p–i and Hetero‐n–i–p–i Structures

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